PDTC123EEF Todos los transistores

 

PDTC123EEF . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PDTC123EEF
   Código: 6A
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 2.2 kOhm
   Resistencia Base-Emisor R2 = 2.2 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 2.5 pF
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: SOT-490
 

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PDTC123EEF Datasheet (PDF)

 ..1. Size:139K  nxp
 pdtc123eef pdtc123ek pdtc123es.pdf pdf_icon

PDTC123EEF

DISCRETE SEMICONDUCTORS DATA SHEETPDTC123E seriesNPN resistor-equipped transistors; R1 = 2.2 k, R2 = 2.2 kProduct data sheet 2004 Aug 06Supersedes data of 2004 Mar 18NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC123E seriesR1 = 2.2 k, R2 = 2.2 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI

 6.1. Size:55K  motorola
 pdtc123et 3.pdf pdf_icon

PDTC123EEF

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC123ETNPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123ETFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k each) Simplification of circuit design Reduces number of co

 6.2. Size:182K  philips
 pdtc123e series.pdf pdf_icon

PDTC123EEF

DISCRETE SEMICONDUCTORS DATA SHEETPDTC123E seriesNPN resistor-equipped transistors; R1 = 2.2 k, R2 = 2.2 kProduct data sheet 2004 Aug 06Supersedes data of 2004 Mar 18NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC123E seriesR1 = 2.2 k, R2 = 2.2 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI

 6.3. Size:55K  philips
 pdtc123et 3.pdf pdf_icon

PDTC123EEF

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC123ETNPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123ETFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k each) Simplification of circuit design Reduces number of co

MOSTRAR MÁS

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: RN1416 | PDTC144EU | PDTA143XM | 2SC3789 | PMBT3904QA | MJE2091 | BC190A

 

 
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