PDTC123TK Todos los transistores

 

PDTC123TK . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PDTC123TK
   Código: GB
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 2.2 kOhm

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 2.5 pF
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: SOT-346

 Búsqueda de reemplazo de transistor bipolar PDTC123TK

 

PDTC123TK Datasheet (PDF)

 ..1. Size:78K  philips
pdtc123tk pdtc123ts pdtc123t ser.pdf pdf_icon

PDTC123TK

PDTC123T series NPN resistor-equipped transistors; R1 = 2.2 k , R2 = open Rev. 01 10 March 2006 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistors (RET) family in Surface Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package PNP complement Philips JEITA JEDEC PDTC123TE SOT416 SC-75 - PDTA123TE PDTC123TK

 7.1. Size:54K  motorola
pdtc123jef 1.pdf pdf_icon

PDTC123TK

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC123JEF NPN resistor-equipped transistor 1999 May 27 Preliminary specification Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC123JEF FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) 3 handbook, halfpage 3 Simplification of circuit design R1 1 Red

 7.2. Size:55K  motorola
pdtc123je 3.pdf pdf_icon

PDTC123TK

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC123JE NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 Aug 03 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JE FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 k respectively) Simplification of circuit design handbook, halfpage 3 3

 7.3. Size:56K  motorola
pdtc123jt 3.pdf pdf_icon

PDTC123TK

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123JT NPN resistor-equipped transistor 1999 May 18 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JT FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) Simplification of circuit design

Otros transistores... PDTC115EEF , PDTC115EK , PDTC115ES , PDTC115TK , PDTC115TS , PDTC123EEF , PDTC123EK , PDTC123ES , A1013 , PDTC123TS , PDTC123YK , PDTC123YS , PDTC124TEF , PDTC124TK , PDTC124TS , PDTC124XEF , PDTC124XK .

History: 2SC2716 | TP9013NND03

 

 
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