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PDTC124XK . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PDTC124XK
   Código: 51
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 22 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.47

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 2.5 pF
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SOT-346
 

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PDTC124XK Datasheet (PDF)

 ..1. Size:138K  nxp
 pdtc124xef pdtc124xk pdtc124xs.pdf pdf_icon

PDTC124XK

PDTC124X seriesNPN resistor-equipped transistors; R1 = 22 k, R2 = 47 kRev. 07 16 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTC124XE SOT416 SC-75 - PDTA124XEPDTC124XEF SOT490 SC-89 - PDTA124XEFPDTC124XK SOT346 SC-59

 6.1. Size:54K  motorola
 pdtc124xef 2.pdf pdf_icon

PDTC124XK

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC124XEFNPN resistor-equipped transistor1999 May 18Preliminary specificationSupersedes data of 1998 Nov 11Philips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC124XEFFEATURES Power dissipation comparable to SOT23 Built-in bias resistors R1 and R2 (typ. 22 k and 47 krespectively)3ha

 6.2. Size:55K  motorola
 pdtc124xe 3.pdf pdf_icon

PDTC124XK

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC124XENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 Sep 21Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124XEFEATURES Built-in bias resistors R1 and R2 (typ. 22 k and 47 krespectively) Simplification of circuit designhandbook, halfpage

 6.3. Size:54K  philips
 pdtc124xef 2.pdf pdf_icon

PDTC124XK

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC124XEFNPN resistor-equipped transistor1999 May 18Preliminary specificationSupersedes data of 1998 Nov 11Philips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC124XEFFEATURES Power dissipation comparable to SOT23 Built-in bias resistors R1 and R2 (typ. 22 k and 47 krespectively)3ha

MOSTRAR MÁS

Otros transistores... PDTC123TK , PDTC123TS , PDTC123YK , PDTC123YS , PDTC124TEF , PDTC124TK , PDTC124TS , PDTC124XEF , SS8050 , PDTC124XS , PDTC143TEF , PDTC143TK , PDTC143TS , PDTC144TEF , PDTC144TK , PDTC144TS , PDTC144VK .

 

 
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