PDTC124XK Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PDTC124XK  📄📄 

Código: 51

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 22 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 0.47

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 2.5 pF

Ganancia de corriente contínua (hFE): 80

Encapsulados: SOT-346

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PDTC124XK datasheet

 ..1. Size:138K  nxp
 pdtc124xef pdtc124xk pdtc124xs.pdf pdf_icon

PDTC124XK

PDTC124X series NPN resistor-equipped transistors; R1 = 22 k , R2 = 47 k Rev. 07 16 November 2009 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTC124XE SOT416 SC-75 - PDTA124XE PDTC124XEF SOT490 SC-89 - PDTA124XEF PDTC124XK SOT346 SC-59

 6.1. Size:54K  motorola
 pdtc124xef 2.pdf pdf_icon

PDTC124XK

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC124XEF NPN resistor-equipped transistor 1999 May 18 Preliminary specification Supersedes data of 1998 Nov 11 Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC124XEF FEATURES Power dissipation comparable to SOT23 Built-in bias resistors R1 and R2 (typ. 22 k and 47 k respectively) 3 ha

 6.2. Size:55K  motorola
 pdtc124xe 3.pdf pdf_icon

PDTC124XK

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC124XE NPN resistor-equipped transistor 1999 May 18 Product specification Supersedes data of 1998 Sep 21 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124XE FEATURES Built-in bias resistors R1 and R2 (typ. 22 k and 47 k respectively) Simplification of circuit design handbook, halfpage

 6.3. Size:54K  philips
 pdtc124xef 2.pdf pdf_icon

PDTC124XK

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC124XEF NPN resistor-equipped transistor 1999 May 18 Preliminary specification Supersedes data of 1998 Nov 11 Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC124XEF FEATURES Power dissipation comparable to SOT23 Built-in bias resistors R1 and R2 (typ. 22 k and 47 k respectively) 3 ha

MOSTRAR MÁS

Otros transistores... PDTC123TK, PDTC123TS, PDTC123YK, PDTC123YS, PDTC124TEF, PDTC124TK, PDTC124TS, PDTC124XEF, 2222A, PDTC124XS, PDTC143TEF, PDTC143TK, PDTC143TS, PDTC144TEF, PDTC144TK, PDTC144TS, PDTC144VK