PDTD113ES Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PDTD113ES  📄📄 

Código: D113ES

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 1 kOhm

Resistencia Base-Emisor R2 = 1 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 7 pF

Ganancia de corriente contínua (hFE): 33

Encapsulados: SOT-54

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PDTD113ES datasheet

 ..1. Size:123K  nxp
 pdtd113ek pdtd113es.pdf pdf_icon

PDTD113ES

PDTD113E series NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 k , R2 = 1 k Rev. 02 16 November 2009 Product data sheet 1. Product profile 1.1 General description 500 mA NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTD113EK SOT346 SC-59A TO-236 PDTB113EK PDTD113ES[1] SOT54 SC-43A TO-92 PDT

 6.1. Size:123K  philips
 pdtd113e ser.pdf pdf_icon

PDTD113ES

PDTD113E series NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 k , R2 = 1 k Rev. 02 16 November 2009 Product data sheet 1. Product profile 1.1 General description 500 mA NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTD113EK SOT346 SC-59A TO-236 PDTB113EK PDTD113ES[1] SOT54 SC-43A TO-92 PDT

 7.1. Size:64K  philips
 pdtd113zt.pdf pdf_icon

PDTD113ES

PDTD113ZT NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 k , R2 = 10 k Rev. 02 23 March 2009 Product data sheet 1. Product profile 1.1 General description NPN 500 mA Resistor-Equipped Transistor (RET) in a small Surface-Mounted Device (SMD) plastic package. PNP complement PDTB113ZT. 1.2 Features Built-in bias resistors Reduces component count Simplifies circuit des

 8.1. Size:49K  motorola
 pdtd114et 4.pdf pdf_icon

PDTD113ES

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 PDTD114ET NPN resistor-equipped transistor 1997 Sep 02 Objective specification Supersedes data of February 1995 File under Discrete Semiconductors, SC04 Philips Semiconductors Objective specification NPN resistor-equipped transistor PDTD114ET FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 handboo

MOSTRAR MÁS

Otros transistores... PDTC144TK, PDTC144TS, PDTC144VK, PDTC144VS, PDTC144WEF, PDTC144WK, PDTC144WS, PDTD113EK, TIP142, PDTD123EK, PDTD123ES, PDTD123TK, PDTD123TS, PDTD123YK, PDTD123YS, RT1N130C, RT1N130M