PDTD113ES . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PDTD113ES
Código: D113ES
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 1 kOhm
Resistencia Base-Emisor R2 = 1 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 7 pF
Ganancia de corriente contínua (hfe): 33
Paquete / Cubierta: SOT-54
Búsqueda de reemplazo de transistor bipolar PDTD113ES
PDTD113ES Datasheet (PDF)
pdtd113ek pdtd113es.pdf
PDTD113E seriesNPN 500 mA, 50 V resistor-equipped transistors;R1 = 1 k, R2 = 1 kRev. 02 16 November 2009 Product data sheet1. Product profile1.1 General description500 mA NPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTD113EK SOT346 SC-59A TO-236 PDTB113EKPDTD113ES[1] SOT54 SC-43A TO-92 PDT
pdtd113e ser.pdf
PDTD113E seriesNPN 500 mA, 50 V resistor-equipped transistors;R1 = 1 k, R2 = 1 kRev. 02 16 November 2009 Product data sheet1. Product profile1.1 General description500 mA NPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTD113EK SOT346 SC-59A TO-236 PDTB113EKPDTD113ES[1] SOT54 SC-43A TO-92 PDT
pdtd113zt.pdf
PDTD113ZTNPN 500 mA, 50 V resistor-equipped transistor;R1 = 1 k, R2 = 10 kRev. 02 23 March 2009 Product data sheet1. Product profile1.1 General descriptionNPN 500 mA Resistor-Equipped Transistor (RET) in a small Surface-MountedDevice (SMD) plastic package.PNP complement: PDTB113ZT.1.2 Features Built-in bias resistors Reduces component count Simplifies circuit des
pdtd114et 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D088PDTD114ETNPN resistor-equipped transistor1997 Sep 02Objective specificationSupersedes data of February 1995File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTD114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3handboo
pdtd114et 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D088PDTD114ETNPN resistor-equipped transistor1997 Sep 02Objective specificationSupersedes data of February 1995File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTD114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3handboo
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
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Recientemente añadidas las descripciónes de los transistores:
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