RT1N130C Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RT1N130C  📄📄 

Código: NP

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 1 kOhm

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Ganancia de corriente contínua (hFE): 100

Encapsulados: SC-59

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RT1N130C datasheet

 ..1. Size:126K  isahaya
 rt1n130c rt1n130m rt1n130s rt1n130u.pdf pdf_icon

RT1N130C

Transistor RT1N130X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1N130X is a one chip transistor RT1N130C with built-in bias resistor,PNP type is RT1P130X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=1k ). APPLICATION Inverted circuit,switching circui

 8.1. Size:139K  isahaya
 rt1n137p.pdf pdf_icon

RT1N130C

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

 8.2. Size:146K  isahaya
 rt1n136c rt1n136m rt1n136s rt1n136u.pdf pdf_icon

RT1N130C

Transistor RT1N136X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1N136X is a one chip transistor RT1N136C with built-in bias resistor,PNP type is RT1P136X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=1k ,R2=10k ). APPLICATION Inverted circuit,switchi

 8.3. Size:465K  isahaya
 rt1n137s.pdf pdf_icon

RT1N130C

RT1N137S Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit mm 4.0 RT1N137S is a one chip transistor with built-in bias resistor, NPN type is RT1P137S. FEATURE 0.1 Built-in bias resistor R =1k , R =22k 1 2 High collector current Ic=1A 0.45 Low VCE(sat) VCE(sat)=0.3V (@Ic=300mA/IB=3mA) 2.5

MOSTRAR MÁS

Otros transistores... PDTD113EK, PDTD113ES, PDTD123EK, PDTD123ES, PDTD123TK, PDTD123TS, PDTD123YK, PDTD123YS, MJE350, RT1N130M, RT1N130S, RT1N130U, RT1N136C, RT1N136M, RT1N136S, RT1N136U, RT1N137P