RT1N137P Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RT1N137P  📄📄 

Código: N1

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 1 kOhm

Resistencia Base-Emisor R2 = 22 kOhm

Ratio típica de resistencia R1/R2 = 0.045

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 150 MHz

Ganancia de corriente contínua (hFE): 100

Encapsulados: SC-62

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RT1N137P datasheet

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RT1N137P

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

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RT1N137P

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RT1N137P

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RT1N137P

Transistor RT1N130X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1N130X is a one chip transistor RT1N130C with built-in bias resistor,PNP type is RT1P130X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=1k ). APPLICATION Inverted circuit,switching circui

MOSTRAR MÁS

Otros transistores... RT1N130C, RT1N130M, RT1N130S, RT1N130U, RT1N136C, RT1N136M, RT1N136S, RT1N136U, BDT88, RT1N137S, RT1N140C, RT1N140M, RT1N140S, RT1N140U, RT1N141C, RT1N141M, RT1N141S