RT1N141C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RT1N141C
Código: N1
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: SC-59
Búsqueda de reemplazo de transistor bipolar RT1N141C
RT1N141C Datasheet (PDF)
rt1n141c rt1n141m rt1n141s rt1n141u.pdf
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TransistorRT1N14BX SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N14BX is one chip transistor RT1N14BC with built-in bias resistor, PNP type is RT1P14BX. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R2=10k). APPLICATION . Inverted circuit,switching circ
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TransistorRT1N14HX SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N14HX is one chip transistor RT1N14HC with built-in bias resistor, PNP type is RT1P14HX. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=10k,R2=4.7k). APPLICATION Inverted circuit,switch
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TransistorRT1N144X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N144X is a one chip transistor RT1N144C with built-in bias resistor,PNP type is RT1P144X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=10k,R2=47k). APPLICATION Inverted circuit,switch
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