RT1N14HU . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RT1N14HU
Código: NJ
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 4.7 kOhm
Ratio típica de resistencia R1/R2 = 2.1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Ganancia de corriente contínua (hfe): 24
Paquete / Cubierta: SC-75A
Búsqueda de reemplazo de transistor bipolar RT1N14HU
RT1N14HU Datasheet (PDF)
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History: 2SB892S | 2N573
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