RT1N237S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RT1N237S
Código: N237
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.047
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.45 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 200 MHz
Ganancia de corriente contínua (hFE): 80
Encapsulados: TO92S
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RT1N237S datasheet
rt1n237c rt1n237m rt1n237s rt1n237u.pdf
Transistor RT1N237X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1N237X is a one chip transistor RT1N237C with built-in bias resistor,PNP type is RT1P237X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=2.2k ,R2=47k ). APPLICATION Inverted circuit,switc
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Transistor RT1N230X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1N230X is a one chip transistor RT1N230C with built-in bias resistor, PNP type is RT1P230X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=2.2k ) APPLICATION Inverted circuit, switching cir
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Transistor RT1N231X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1N231X is a one chip transistor RT1N231C with built-in bias resistor,PNP type is RT1P231X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=2.2k ,R2=2.2k ). APPLICATION Inverted circuit,swit
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Transistor RT1N234X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1N234X is a one chip transistor RT1N234C with built-in bias resistor,PNP type is RT1P234X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=2.2k ,R2=10k ). APPLICATION Inverted circuit,switc
Otros transistores... RT1N231S, RT1N231U, RT1N234C, RT1N234M, RT1N234S, RT1N234U, RT1N237C, RT1N237M, TIP35C, RT1N237U, RT1N240C, RT1N240M, RT1N240S, RT1N240U, RT1N241C, RT1N241M, RT1N241S
History: PDTA114TMB | EMB6
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