RT1N24BC . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RT1N24BC
Código: NV
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia Base-Emisor R2 = 22 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Ganancia de corriente contínua (hfe): 56
Paquete / Cubierta: SC-59
Búsqueda de reemplazo de transistor bipolar RT1N24BC
RT1N24BC Datasheet (PDF)
rt1n24bc rt1n24bm rt1n24bs rt1n24bu.pdf
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TransistorRT1N242X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N242X is a one chip transistor RT1N242C with built-in bias resistor,PNP type is RT1P242X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=22k,R2=47k). APPLICATION Inverted circuit,switchin
rt1n241c rt1n241m rt1n241s rt1n241u.pdf
TransistorRT1N241X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N241X is a one chip transistor RT1N241C with built-in bias resistor,PNP type is RT1P241X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=22k,R2=22k). APPLICATION Inverted circuit,switch
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TransistorRT1N240X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N240X is a one chip transistor RT1N240C with built-in bias resistor, PNP type is RT1P240X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=22k) APPLICATION Inverted circuit, switching circ
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