RT1N434U
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RT1N434U
Código: N4
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 4.7 kOhm
Resistencia Base-Emisor R2 = 22 kOhm
Ratio típica de resistencia R1/R2 = 0.21
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200
MHz
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta:
SC-75A
Búsqueda de reemplazo de transistor bipolar RT1N434U
RT1N434U
Datasheet (PDF)
..1. Size:141K isahaya
rt1n434c rt1n434m rt1n434s rt1n434u.pdf
TransistorRT1N434X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N434X is a one chip transistor RT1N434C with built-in bias resistor,PNP type is RT1P434X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k,R2=22k). APPLICATION Inverted circuit,switc
8.1. Size:168K isahaya
rt1n436c rt1n436m rt1n436s rt1n436u.pdf
TransistorRT1N436X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N436X is a one chip transistor RT1N436C with built-in bias resistor,PNP type is RT1P436X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k,R2=47k). APPLICATION Inverted circuit,switc
8.2. Size:153K isahaya
rt1n431c rt1n431m rt1n431s rt1n431u.pdf
TransistorRT1N431X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N431X is a one chip transistor RT1N431C with built-in bias resistor,PNP type is RT1P431X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k,R2=4.7k). APPLICATION Inverted circuit,swit
8.3. Size:126K isahaya
rt1n430c rt1n430m rt1n430s rt1n430u.pdf
TransistorRT1N430X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N430X is a one chip transistor RT1N430C with built-in bias resistor, PNP type is RT1P430X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k) APPLICATION Inverted circuit, switching cir
8.4. Size:157K isahaya
rt1n432c rt1n432m rt1n432s rt1n432u.pdf
TransistorRT1N432X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N432X is a one chip transistor RT1N432C with built-in bias resistor,PNP type is RT1P432X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k,R2=10k). APPLICATION Inverted circuit,switc
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.