RT1P141C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RT1P141C
Código: P1
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: SC-59
Búsqueda de reemplazo de transistor bipolar RT1P141C
RT1P141C Datasheet (PDF)
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TransistorRT1P14BX SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P14BX is a one chip transistor RT1P14BC with built-in bias resistor,NPN type is RT1N14BX. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R2=10k). APPLICATION Inverted circuit,switching circu
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