RT1P151C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TransistorRT1P151X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P151X is a one chip transistor RT1P151C with built-in bias resistor,NPN type is RT1N151X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor R1=100k,R2=100k. APPLICATION . Inverted circui

TransistorRT1P150X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P150X is a one chip transistor RT1P150C with built-in bias resistor,NPN type is RT1N150X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=100k). APPLICATION . Inverted circuit,switching ci

TransistorRT1P15BX SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P15BX is a one chip transistor RT1P15BC with built-in bias resistor,NPN type is RT1N15BX. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R2=100k). APPLICATION . Inverted circuit,switching ci

ISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to person

TransistorRT1P136X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P136X is a one chip transistor RT1P136C with built-in bias resistor,NPN type is RT1N136X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=1k,R2=10k). APPLICATION Inverted circuit,switchi

TransistorRT1P144X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION OUTLINE DRAWING UNITmmRT1P144X is a one chip transistor RT1P144C with built-in bias resistor,NPN type is RT1N144X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=10k,R2=47k). APPLICATION . Inverted circuit,switch

TransistorRT1P140X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P140X is a one chip transistor RT1P140C with built-in bias resistor,NPN type is RT1N140X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=10k). APPLICATION . Inverted circuit,switching cir

TransistorRT1P14HX SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P14HX is a one chip transistor RT1P14HC with built-in bias resistor,NPN type is RT1N14HX. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=10k,R2=4.7k). APPLICATION Inverted circuit,switc

TransistorRT1P130X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P130X is a one chip transistor RT1P130C with built-in bias resistor,NPN type is RT1N130X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=1k). APPLICATION . Inverted circuit,switching circ

TransistorRT1P14BX SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P14BX is a one chip transistor RT1P14BC with built-in bias resistor,NPN type is RT1N14BX. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R2=10k). APPLICATION Inverted circuit,switching circu

TransistorRT1P141X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P141X is a one chip transistor RT1P141C with built-in bias resistor,NPN type is RT1N141X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=10k,R2=10k). APPLICATION . Inverted circuit,swit

RT1P137S Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unit: mm 4.0 RT1P137S is a one chip transistor with built-in bias resistor, NPN type is RT1N137S. FEATURE 0.1 Built-in bias resistor R =1k, R =22k 1 2High collector current Ic=-1A 0.45 Low VCE(sat) VCE(sat)=-0.3V (@Ic=-300mA/IB=-3mA)