RT1P231U . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RT1P231U
Código: PB
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 2.2 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: SC-75A
Búsqueda de reemplazo de transistor bipolar RT1P231U
RT1P231U Datasheet (PDF)
rt1p231c rt1p231m rt1p231s rt1p231u.pdf
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TransistorRT1P230X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P230X is a one chip transistor RT1P230C with built-in bias resistor,NPN type is RT1N230X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=2.2k). APPLICATION . Inverted circuit,switching ci
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TransistorRT1P237X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P237X is a one chip transistor RT1P237C with built-in bias resistor,NPN type is RT1N237X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=2.2k,R2=47k). APPLICATION . Inverted circuit,swi
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