RT1P234U
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RT1P234U
Código: PE
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 0.22
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150
MHz
Ganancia de corriente contínua (hfe): 33
Paquete / Cubierta:
SC-75A
RT1P234U
Datasheet (PDF)
..1. Size:153K isahaya
rt1p234c rt1p234m rt1p234s rt1p234u.pdf
TransistorRT1P234X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P234X is a one chip transistor RT1P234C with built-in bias resistor,NPN type is RT1N234X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=2.2k,R2=10k). APPLICATION . Inverted circuit,swi
8.1. Size:127K isahaya
rt1p230c rt1p230m rt1p230s rt1p230u.pdf
TransistorRT1P230X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P230X is a one chip transistor RT1P230C with built-in bias resistor,NPN type is RT1N230X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=2.2k). APPLICATION . Inverted circuit,switching ci
8.2. Size:127K isahaya
rt1p237c rt1p237m rt1p237s rt1p237u.pdf
TransistorRT1P237X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P237X is a one chip transistor RT1P237C with built-in bias resistor,NPN type is RT1N237X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=2.2k,R2=47k). APPLICATION . Inverted circuit,swi
8.3. Size:131K isahaya
rt1p231c rt1p231m rt1p231s rt1p231u.pdf
TransistorRT1P231X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P231X is a one chip transistor RT1P231C with built-in bias resistor,NPN type is RT1N231X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=2.2k,R2=2.2k). APPLICATION . Inverted circuit,sw
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