RT1P237M Todos los transistores

 

RT1P237M . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RT1P237M
   Código: PD
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 2.2 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.047

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150 MHz
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SC-70

 Búsqueda de reemplazo de transistor bipolar RT1P237M

 

RT1P237M Datasheet (PDF)

 ..1. Size:127K  isahaya
rt1p237c rt1p237m rt1p237s rt1p237u.pdf

RT1P237M RT1P237M

TransistorRT1P237X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P237X is a one chip transistor RT1P237C with built-in bias resistor,NPN type is RT1N237X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=2.2k,R2=47k). APPLICATION . Inverted circuit,swi

 8.1. Size:153K  isahaya
rt1p234c rt1p234m rt1p234s rt1p234u.pdf

RT1P237M RT1P237M

TransistorRT1P234X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P234X is a one chip transistor RT1P234C with built-in bias resistor,NPN type is RT1N234X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=2.2k,R2=10k). APPLICATION . Inverted circuit,swi

 8.2. Size:127K  isahaya
rt1p230c rt1p230m rt1p230s rt1p230u.pdf

RT1P237M RT1P237M

TransistorRT1P230X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P230X is a one chip transistor RT1P230C with built-in bias resistor,NPN type is RT1N230X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=2.2k). APPLICATION . Inverted circuit,switching ci

 8.3. Size:131K  isahaya
rt1p231c rt1p231m rt1p231s rt1p231u.pdf

RT1P237M RT1P237M

TransistorRT1P231X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P231X is a one chip transistor RT1P231C with built-in bias resistor,NPN type is RT1N231X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=2.2k,R2=2.2k). APPLICATION . Inverted circuit,sw

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