2SA1083 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SA1083, 2SA1084, 2SA1085Silicon PNP EpitaxialApplication Low frequency low noise amplifier Complementary pair with 2SC2545, 2SC2546 and 2SC2547OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA1083, 2SA1084, 2SA1085Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SA1083 2SA1084 2SA1085 UnitCollector to base voltage VCBO 60 90 120 VCollector t

2SA1083 -0.1 A, -60 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Low Frequency Amplifier G HEmitterCollector CLASSIFICATION OF hFE Base JProduct-Rank 2SA1083-D 2SA1083-EA DRange 250-500 400-800MillimeterREF.Min. Max.BA 4.40 4.70B 4.

2SA1025, 2SA1081, 2SA1082Silicon PNP EpitaxialApplication Low frequency amplifier Complementary pair with 2SC2396, 2SC2543 and 2SC2544OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA1025, 2SA1081, 2SA1082Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SA1025 2SA1081 2SA1082 UnitCollector to base voltage VCBO 60 90 120 VCollector to emitter

2SA1082 -0.1 A , -120 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Low Frequency Amplifier G HEmitterCollector CLASSIFICATION OF hFE Base JProduct-Rank 2SA1082-D 2SA1082-EA DRange 250-500 400-800MillimeterREF.Min. Max.BA 4.40 4.70B

2SA1084 -0.1 A, -90 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Low Frequency Amplifier G HEmitterCollector CLASSIFICATION OF hFE Base JProduct-Rank 2SA1084-D 2SA1084-EA DRange 250-500 400-800MillimeterREF.Min. Max.BA 4.40 4.70B 4.

2SA1081 -0.1 A, -90 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Low Frequency Amplifier G HEmitterCollector CLASSIFICATION OF hFE Base JProduct-Rank 2SA1081-D 2SA1081-EA DRange 250~500 400~800MillimeterREF.Min. Max.BA 4.40 4.70B 4.

isc Silicon PNP Transistor 2SA1082DESCRIPTIONHigh VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesign For Amplifier and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -120 VCBOV Collector-Emitter Voltage -120 VCEOV Emitter-Base Voltage -

isc Silicon PNP Power Transistor 2SA1080DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -40V(Min.)(BR)CEOGood Linearity of hFEComplement to Type 2SC2530Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNIT