RT1P242S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RT1P242S
Código: P242
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 22 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.47
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.45 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Ganancia de corriente contínua (hfe): 68
Paquete / Cubierta: TO-92S
Búsqueda de reemplazo de transistor bipolar RT1P242S
RT1P242S Datasheet (PDF)
rt1p242c rt1p242m rt1p242s rt1p242u.pdf
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rt1p241c rt1p241m rt1p241s rt1p241u.pdf
TransistorRT1P241X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P241X is a one chip transistor RT1P241C with built-in bias resistor,NPN type is RT1N241X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=22k,R2=22k). APPLICATION Inverted circuit,switch
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History: KT8107A2 | CS5610 | MX0912B251Y
History: KT8107A2 | CS5610 | MX0912B251Y
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