RT1P430M Todos los transistores

 

RT1P430M . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RT1P430M
   Código: P6
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 4.7 kOhm

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150 MHz
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SC-70

 Búsqueda de reemplazo de transistor bipolar RT1P430M

 

RT1P430M Datasheet (PDF)

 ..1. Size:127K  isahaya
rt1p430c rt1p430m rt1p430s rt1p430u.pdf

RT1P430M
RT1P430M

TransistorRT1P430X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P430X is a one chip transistor RT1P430C with built-in bias resistor,NPN type is RT1N430X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k). APPLICATION . Inverted circuit,switching ci

 8.1. Size:128K  isahaya
rt1p434c rt1p434m rt1p434s rt1p434u.pdf

RT1P430M
RT1P430M

TransistorRT1P434X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P434X is a one chip transistor RT1P434C with built-in bias resistor,NPN type is RT1N434X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k,R2=22k). APPLICATION . Inverted circuit,swi

 8.2. Size:167K  isahaya
rt1p436c rt1p436m rt1p436s rt1p436u.pdf

RT1P430M
RT1P430M

TransistorRT1P436X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION OUTLINE DRAWING UNITmmRT1P436X is a one chip transistor RT1P436C with built-in bias resistor,NPN type is RT1N436X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k,R2=47k). APPLICATION . Inverted circuit,switc

 8.3. Size:127K  isahaya
rt1p432c rt1p432m rt1p432s rt1p432u.pdf

RT1P430M
RT1P430M

TransistorRT1P432X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P432X is a one chip transistor RT1P432C with built-in bias resistor,NPN type is RT1N432X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k,R2=10k). APPLICATION . Inverted circuit,swi

 8.4. Size:156K  isahaya
rt1p431c rt1p431m rt1p431s.pdf

RT1P430M
RT1P430M

TransistorRT1P431X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P431X is a one chip transistor RT1P431C with built-in bias resistor,NPN type is RT1N431X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k,R2=4.7k). APPLICATION Inverted circuit,s

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SB1233

 

 
Back to Top

 


History: 2SB1233

RT1P430M
  RT1P430M
  RT1P430M
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050

 

 

 
Back to Top