2SA1090 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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2SA1091 TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1091 High Voltage Control Applications Unit: mmPlasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage: VCBO = -300 V, VCEO = -300 V Low saturation voltage: VCE (sat) = -0.5 V (max) Small collector output capacitance: Cob = 6 pF (typ.)

Power Transistors2SA1096, 2SA1096ASilicon PNP epitaxial planar typeFor low-frequency power amplificationUnit: mm8.0+0.50.13.20.2Complementary to 2SC2497, 2SC2497A 3.160.1 Features Output of 5 W can be obtained by a complementary pair with2SC2497 and 2SC2497A TO-126B package which requires no insulation plate for installa-tion to the heat sink A

JMnic Product Specification Silicon PNP Power Transistors 2SA1096 2SA1096A DESCRIPTION With TO-126 package Complement to type 2SC2497/2SC2497A APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collect

JMnic Product Specification Silicon PNP Power Transistors 2SA1093 DESCRIPTION With TO-3P(I) package Complement to type 2SC2563 High transition frequency APPLICATIONS Audio frequency power amplifier applicatios PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 BaseAbsolute maximum rat

JMnic Product Specification Silicon PNP Power Transistors 2SA1094 DESCRIPTION With MT-200 package Complement to type 2SC2564 APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CO

JMnic Product Specification Silicon PNP Power Transistors 2SA1095 DESCRIPTION With MT-200 package Complement to type 2SC2565 High breakdown voltage High transition frequency APPLICATIONS Power amplifier applications Recommended for 100W high-fidelity audio frequency amplifer output stage PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to

isc Silicon PNP Power Transistor 2SA1096DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -50V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2497Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power amplificationABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNIT

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1096 2SA1096A DESCRIPTION With TO-126 package Complement to type 2SC2497/2SC2497A APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE U

isc Silicon PNP Power Transistor 2SA1093DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOGood Linearity of hFEComplement to Type 2SC2563Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applicationsRecommend for 50W audio amplifier output stageABSOLUTE MAXIMUM R

isc Silicon PNP Power Transistor 2SA1094DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -140V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2564Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommended for 80W high-fidelity audio frequencyamplifier output stageABSOLUTE M

isc Silicon PNP Power Transistor 2SA1095DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -160V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2565Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommended for 100W high-fidelity audio frequencyamplifier output stageABSOLUTE

isc Silicon PNP Power Transistor 2SA1096ADESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -60V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2497AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power amplificationABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNI