RT2N02M
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RT2N02M
Código: NF
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 4.7 kOhm
Resistencia Base-Emisor R2 = 4.7 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 10
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200
MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta:
SC-88A
Búsqueda de reemplazo de transistor bipolar RT2N02M
RT2N02M
Datasheet (PDF)
..1. Size:190K isahaya
rt2n02m.pdf
RT2N02M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N02M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=4.7k, R2=4.7k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Int
9.1. Size:190K isahaya
rt2n09m.pdf
RT2N09M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N09M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=2.2k, R2=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte
9.2. Size:202K isahaya
rt2n04m.pdf
RT2N04M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N04M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=22k, R2=22k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter
9.3. Size:195K isahaya
rt2n08m.pdf
RT2N08M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N08M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=2.2k, R2=10k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte
9.4. Size:180K isahaya
rt2n05m.pdf
RT2N05M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N05M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=47k, R2=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter
9.5. Size:165K isahaya
rt2n07m.pdf
RT2N07M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N07M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=1k, R2=10k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interf
9.6. Size:165K isahaya
rt2n06m.pdf
RT2N06M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N06M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=100k, R2=100k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Int
9.7. Size:165K isahaya
rt2n01m.pdf
RT2N01M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N01M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=2.2k, R2=2.2k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Int
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