RT2N02M Todos los transistores

 

RT2N02M . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RT2N02M
   Código: NF
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 4.7 kOhm
   Resistencia Base-Emisor R2 = 4.7 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: SC-88A
 

 Búsqueda de reemplazo de RT2N02M

   - Selección ⓘ de transistores por parámetros

 

RT2N02M Datasheet (PDF)

 ..1. Size:190K  isahaya
 rt2n02m.pdf pdf_icon

RT2N02M

RT2N02M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N02M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=4.7k, R2=4.7k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Int

 9.1. Size:190K  isahaya
 rt2n09m.pdf pdf_icon

RT2N02M

RT2N09M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N09M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=2.2k, R2=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte

 9.2. Size:202K  isahaya
 rt2n04m.pdf pdf_icon

RT2N02M

RT2N04M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N04M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=22k, R2=22k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter

 9.3. Size:195K  isahaya
 rt2n08m.pdf pdf_icon

RT2N02M

RT2N08M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N08M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=2.2k, R2=10k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte

MOSTRAR MÁS

Otros transistores... RT1P44HM , RT1P44HS , RT1P44HU , RT1P44QC , RT1P44QM , RT1P44QS , RT1P44QU , RT2N01M , 13003 , RT2N03M , RT2N04M , RT2N05M , RT2N06M , RT2N07M , RT2N08M , RT2N09M , RT2N10M .

 

 
Back to Top

 


 
.