RT2N14M Todos los transistores

 

RT2N14M . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RT2N14M
   Código: N5
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.21

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: SC-88A
 

 Búsqueda de reemplazo de RT2N14M

   - Selección ⓘ de transistores por parámetros

 

RT2N14M Datasheet (PDF)

 ..1. Size:207K  isahaya
 rt2n14m.pdf pdf_icon

RT2N14M

RT2N14M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N14M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=10k, R2=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter

 9.1. Size:166K  isahaya
 rt2n13m.pdf pdf_icon

RT2N14M

RT2N13M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N13M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=10k, R2=4.7k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte

 9.2. Size:165K  isahaya
 rt2n17m.pdf pdf_icon

RT2N14M

RT2N17M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N17M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=47k, R2=22k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter

 9.3. Size:169K  isahaya
 rt2n15m.pdf pdf_icon

RT2N14M

RT2N15M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N15M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=22k, R2=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter

MOSTRAR MÁS

Otros transistores... RT2N06M , RT2N07M , RT2N08M , RT2N09M , RT2N10M , RT2N11M , RT2N12M , RT2N13M , MJE340 , RT2N15M , RT2N16M , RT2N17M , RT2N18M , RT2N19M , RT2N20M , RT2N21M , RT2N22M .

History: FMB200

 

 
Back to Top

 


 
.