RT2N21M Todos los transistores

 

RT2N21M . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RT2N21M
   Código: N7
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 10 kOhm

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SC-88A
     - Selección de transistores por parámetros

 

RT2N21M Datasheet (PDF)

 ..1. Size:164K  isahaya
rt2n21m.pdf pdf_icon

RT2N21M

RT2N21M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N21M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=10k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui

 9.1. Size:164K  isahaya
rt2n24m.pdf pdf_icon

RT2N21M

RT2N24M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N24M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=100k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circu

 9.2. Size:163K  isahaya
rt2n25m.pdf pdf_icon

RT2N21M

RT2N25M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N25M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=200k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circu

 9.3. Size:163K  isahaya
rt2n26m.pdf pdf_icon

RT2N21M

RT2N26M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N26M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R2=10k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: AD162-6 | DTC143ZET1G | PXT8050-D3 | KT321B | BFQ268 | NA02E | 2N5959

 

 
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