RT2P18M Todos los transistores

 

RT2P18M . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RT2P18M
   Código: PP
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 1 kOhm

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150 MHz
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SC-88A
     - Selección de transistores por parámetros

 

RT2P18M Datasheet (PDF)

 ..1. Size:163K  isahaya
 rt2p18m.pdf pdf_icon

RT2P18M

RT2P18M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P18M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=1k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circuit

 9.1. Size:165K  isahaya
 rt2p16m.pdf pdf_icon

RT2P18M

RT2P16M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P16M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=47k, R2=10k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter

 9.2. Size:201K  isahaya
 rt2p14m.pdf pdf_icon

RT2P18M

RT2P14M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P14M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=10k, R2=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter

 9.3. Size:205K  isahaya
 rt2p12m.pdf pdf_icon

RT2P18M

RT2P12M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P12M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=4.7k, R2=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte

MOSTRAR MÁS

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SA795A | 3DG2413K | 2SA1706T-AN | 2SA815 | RT3YB7M | BC848CW-G

 

 
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