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UN211L . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: UN211L

Código: 6Q

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 4.7 kOhm

Resistencia Base-Emisor R2 = 4.7 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 80 MHz

Ganancia de corriente contínua (hfe): 20

Empaquetado / Estuche: SOT23_SC59

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UN211L Datasheet (PDF)

1.1. un2118 un2119 un211d un211e un211f un211h un211l un211m un211n un211t un211v un211z.pdf Size:375K _panasonic

UN211L
UN211L

Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 3 ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts 1 2 • Mini type package allowing easy automatic insertion through tape (0.95) (0.95) packing and mag

5.1. kmun2114.pdf Size:307K _update

UN211L
UN211L

s SMD Type Transs iis ttoCs SMD Type Tran Iorr SMD Type Tra n sistIC SMD Type SMD Type SMD Type or Product specification KMUN211 4 SOT-23 Unit: mm ■ Features +0.1 2.9-0.1 +0.1 0.4-0.1 ● Simplifies Circuit Design 3 ● Reduces Board Space ● Reduces Component Count 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 PIN 3 R1 COLLECTOR PIN 1 (OUTPUT) BASE 1.Base (

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UN211L
UN211L

MMUN2111LT1G, SMMUN2111LT1G, NSVMMUN2111LT1G Series Bias Resistor Transistors PNP Silicon Surface Mount Transistors http://onsemi.com with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network SO

 5.3. mun2116.pdf Size:134K _upd

UN211L
UN211L

MUN2116, MMUN2116L, MUN5116, DTA143TE, DTA143TM3, NSBA143TF3 Digital Transistors (BRT) R1 = 4.7 kW, R2 = 8 kW http://onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (

5.4. mun2115.pdf Size:139K _upd

UN211L
UN211L

MUN2115, MMUN2115L, MUN5115, DTA114TE, DTA114TM3, NSBA114TF3 Digital Transistors (BRT) R1 = 10 kW, R2 = 8 kW http://onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (B

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UN211L
UN211L

MUN2111T1 Series, SMUN2111T1 Series Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two r

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UN211L

MMUN2111LT1G, SMMUN2111LT1G, NSVMMUN2111LT1G Series Bias Resistor Transistors PNP Silicon Surface Mount Transistors http://onsemi.com with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network SO

5.7. mun2111t1rev5.pdf Size:236K _motorola

UN211L
UN211L

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MUN2111T1/D Bias Resistor Transistor MUN2111T1 PNP Silicon Surface Mount Transistor with SERIES Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single

5.8. mmun2111lt1rev0d.pdf Size:188K _motorola

UN211L
UN211L

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMUN2111LT1/D Bias Resistor Transistor MMUN2111LT1 PNP Silicon Surface Mount Transistor with SERIES Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a sing

5.9. mmun2111.pdf Size:267K _motorola

UN211L
UN211L

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMUN2111LT1/D Bias Resistor Transistor MMUN2111LT1 PNP Silicon Surface Mount Transistor with SERIES Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a sing

5.10. nsvmmun2113lt3g.pdf Size:119K _onsemi

UN211L
UN211L

MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 Digital Transistors (BRT) R1 = 47 kW, R2 = 47 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT

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UN211L
UN211L

MMUN2111LT1G Series Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http://onsemi.com device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series b

5.12. mun2111t1-d.pdf Size:111K _onsemi

UN211L
UN211L

MUN2111T1 Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http://onsemi.com device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a PIN 3 monolithic bias network consisting of tw

5.13. mun2111t1 6a-lsot346.pdf Size:130K _onsemi

UN211L
UN211L

MUN2111T1 Series Preferred Device Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http://onsemi.com device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network PIN 3 consisting of two r

5.14. nsvmmun2112lt1g.pdf Size:111K _onsemi

UN211L
UN211L

MUN2112, MMUN2112L, MUN5112, DTA124EE, DTA124EM3, NSBA124EF3 Digital Transistors (BRT) R1 = 22 kW, R2 = 22 kW http://onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (

5.15. nsvmun2112t1g.pdf Size:111K _onsemi

UN211L
UN211L

MUN2112, MMUN2112L, MUN5112, DTA124EE, DTA124EM3, NSBA124EF3 Digital Transistors (BRT) R1 = 22 kW, R2 = 22 kW http://onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (

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UN211L
UN211L

Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 3 ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts 1 2 • Mini type package allowing easy automatic insertion through tape (0.95) (0.95) packing and mag

5.17. mmun2111.pdf Size:199K _wietron

UN211L
UN211L

MMUN2111 Series Bias Resistor Transistor COLLECTOR 3 3 PNP Silicon R 1 1 BASE R 2 1 2 2 EMITTER SOT-23 ( T =25 C unless otherwise noted) Maximum Ratings A Rating Symbol Value Unit Collector-Emitter Voltage V 50 CEO Vdc Vdc Collector-Base Voltage VCBO 50 Collector Current-Continuous IC mAdc 100 Thermal Characteristics Max Unit Characteristics Symbol Total Device Dissipatio

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UN211L
UN211L

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LMUN2110LT1G PNP Silicon Surface Mount Transistors Series with Monolithic Bias Resistor Network 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor 1 Transistor) contains a single transistor with a monolithic bias network 2 consisting of two

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