2SA1104 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1104
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 120 V
Tensión colector-emisor (Vce): 120 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 20 MHz
Capacitancia de salida (Cc): 300 pF
Ganancia de corriente contínua (hFE): 80
Encapsulados: TO218
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2SA1104 datasheet
..1. Size:79K wingshing
2sa1104.pdf 
Silicon Epitaxial Planar Transistor 2SA1104 GENERAL DESCRIPTION Silicon PNP high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose MT-100 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 120 V Collector-emitter voltage (open base) VCEO - 120 V Collector curren
..2. Size:149K jmnic
2sa1104.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1104 DESCRIPTION With TO-3PN package High frequency High power dissipation APPLICATIONS For use in audio and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= )
..3. Size:224K inchange semiconductor
2sa1104.pdf
isc Silicon PNP Power Transistor 2SA1104 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Co
8.1. Size:48K wingshing
2sa1103.pdf
2SA1103 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC2578 ABSOLUTE MAXIMUM RATING (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -7
8.2. Size:26K wingshing
2sa1102.pdf
2SA1102 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC2577 ABSOLUTE MAXIMUM RATING (Ta=25 C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -120 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -8 A Colle
8.3. Size:48K wingshing
2sa1105.pdf
2SA1105 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC2577 ABSOLUTE MAXIMUM RATING (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -120 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -9
8.4. Size:25K wingshing
2sa1106.pdf
2SA1106 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC2581 ABSOLUTE MAXIMUM RATING (Ta=25 C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -200 V Collector-Emitter Voltage VCEO -140 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -10 A Coll
8.5. Size:144K jmnic
2sa1109.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1109 DESCRIPTION With TO-3 package Low collector saturation voltage High transition frequency APPLICATIONS For audio frequency amplifier and high power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ra
8.6. Size:159K jmnic
2sa1108.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1108 DESCRIPTION With MT-200 package High power dissipation APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDIT
8.7. Size:159K jmnic
2sa1107.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1107 DESCRIPTION With MT-200 package High power dissipations APPLICATIONS Audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER
8.8. Size:149K jmnic
2sa1103.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1103 DESCRIPTION With TO-3PN package Complement to type 2SC2578 High current capability High power dissipation APPLICATIONS Audio power amplifer applications DC-DC converters PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3
8.9. Size:149K jmnic
2sa1102.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1102 DESCRIPTION With TO-3PN package Complement to type 2SC2577 High current capability High power dissipation APPLICATIONS Audio power amplifer applications DC-DC converters PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3
8.10. Size:149K jmnic
2sa1105.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1105 DESCRIPTION With TO-3PN package High frequency High power dissipation APPLICATIONS Audio power amplifer applications DC-DC converters PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta=
8.12. Size:192K cn sptech
2sa1106.pdf
SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1106 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Good Linearity of h FE High Power Dissipation Complement to Type 2SC2581 APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag
8.13. Size:208K inchange semiconductor
2sa1109.pdf
isc Silicon PNP Power Transistor 2SA1109 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -180V(Min.) (BR)CEO High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency amplifier and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI
8.14. Size:220K inchange semiconductor
2sa1108.pdf
isc Silicon PNP Power Transistor 2SA1108 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -130V(Min) (BR)CEO Good Linearity of h FE High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect
8.15. Size:219K inchange semiconductor
2sa1107.pdf
isc Silicon PNP Power Transistor 2SA1107 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Good Linearity of h FE High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect
8.16. Size:222K inchange semiconductor
2sa1103.pdf
isc Silicon PNP Power Transistor 2SA1103 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -100
8.17. Size:221K inchange semiconductor
2sa1102.pdf
isc Silicon PNP Power Transistor 2SA1102 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -80 V
8.18. Size:223K inchange semiconductor
2sa1105.pdf
isc Silicon PNP Power Transistor 2SA1105 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Co
8.19. Size:202K inchange semiconductor
2sa1106.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1106 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Good Linearity of h FE High Power Dissipation Complement to Type 2SC2581 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXI
Otros transistores... 2SA1095
, 2SA1096
, 2SA1096A
, 2SA1097
, 2SA110
, 2SA1100
, 2SA1102
, 2SA1103
, C5198
, 2SA1105
, 2SA1106
, 2SA1107
, 2SA1107A
, 2SA1108
, 2SA1108A
, 2SA1109
, 2SA111
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