UMB10NFHA
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UMB10NFHA
Código: B10
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.047
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15
W
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250
MHz
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta:
SOT-353
Búsqueda de reemplazo de transistor bipolar UMB10NFHA
UMB10NFHA
Datasheet (PDF)
..1. Size:1310K rohm
umb10nfha.pdf
EMB10 / UMB10N / IMB10AEMB10FHA / UMB10NFHA / IMB10AFRADatasheetPNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCC-50V (4) (4) (1) (1) (2) (2) IC(MAX.)-100mA (3) (3) R12.2kWEMB10 UMB10N EMB10FHA UMB10NFHAR247kW (SC-107C) SOT-353 (
..2. Size:1355K rohm
emb10fha umb10nfha imb10afra.pdf
EMB10 / UMB10N / IMB10AEMB10FHA / UMB10NFHA / IMB10AFRADatasheetPNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCC-50V (4) (4) (1) (1) (2) (2) IC(MAX.)-100mA (3) (3) R12.2kWEMB10 UMB10N EMB10FHA UMB10NFHAR247kW (SC-107C) SOT-353 (
8.1. Size:62K rohm
umb10n imb10a b10 sot23-6 sot363.pdf
TransistorsGeneral purpose(dual digital transistors)UMB10N / IMB10AFFeatures FExternal dimensions (Units: mm)1) Two DTA123J chips in a UMT orSMT package.2) Mounting possible with UMT3 orSMT3 automatic mounting ma-chines.3) Transistor elements are indepen-dent, eliminating interference.4) Mounting cost and area can be cutin half.FStructureEpitaxial planar typePNP
8.2. Size:118K rohm
emb10 umb10n imb10a umb10n.pdf
EMB10 / UMB10N / IMB10A Transistors General purpose (dual digital transistors) EMB10 / UMB10N / IMB10A Dimensions (Unit : mm) Features 1) Two DTA123J chips in a EMT or UMT or SMT EMB10package. (6) (5) (4)2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating (1) (2) (3)interference. Each l
9.1. Size:801K nxp
pemb10 pumb10.pdf
PEMB10; PUMB10PNP/PNP resistor-equipped transistors;R1 = 2.2 k, R2 = 47 kRev. 3 3 January 2012 Product data sheet1. Product profile1.1 General descriptionPNP/PNP Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number Package NPN/PNP NPN/NPN Package complement complement configurationNXP JEITAPEM
9.2. Size:108K chenmko
chumb10gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHUMB10GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-88/SOT-363)SC-88/SOT-363* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cu
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