2SC6092LS Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC6092LS  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 35 W

Tensión colector-base (Vcb): 1500 V

Tensión colector-emisor (Vce): 700 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 5.3

Encapsulados: TO-220FI

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2SC6092LS datasheet

 ..1. Size:50K  sanyo
2sc6092ls.pdf pdf_icon

2SC6092LS

Ordering number ENA0834 2SC6092LS SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection 2SC6092LS Output Applications Features High speed. High breakdown voltage (VCBO=1500V). Adoption of high reliability HVP process. Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symb

 8.1. Size:40K  sanyo
2sc6099.pdf pdf_icon

2SC6092LS

Ordering number ENA0435 2SC6099 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6099 High-Voltage Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switch

 8.2. Size:51K  sanyo
2sc6090ls.pdf pdf_icon

2SC6092LS

Ordering number ENA0996 2SC6090LS SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection 2SC6090LS Output Applications Features High speed. High breakdown voltage (VCBO=1500V). Adoption of high reliability HVP process. Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symb

 8.3. Size:50K  sanyo
2sc6097.pdf pdf_icon

2SC6092LS

Ordering number ENA0412 2SC6097 NPN Epitaxial Planar Silicon Transistor 2SC6097 High-Current Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dis

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