MT6L62AE
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MT6L62AE
Código: TF
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1
W
Tensión colector-base (Vcb): 10
V
Tensión colector-emisor (Vce): 5
V
Tensión emisor-base (Veb): 1.5
V
Corriente del colector DC máxima (Ic): 0.025
A
Temperatura operativa máxima (Tj): 125
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10000
MHz
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta: 2-2N1C
Búsqueda de reemplazo de transistor bipolar MT6L62AE
MT6L62AE
Datasheet (PDF)
..1. Size:192K toshiba
mt6l62ae.pdf
MT6L62AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L62AE VHF-UHF Band Low Noise Amplifier Application Unit: mmVHF-UHF Band Oscillator Application Mounted Devices Q1 Q2Three pin SSM type part No. MT3S07S MT3S03AS Absolute Maximum Ratings (Ta = 25C) Rating Characteristics Symbol Unit Q1 Q2Collector-base voltage VCBO 10 10 VCollector-emitter voltage VCE
7.1. Size:71K toshiba
mt6l62at.pdf
MT6L62AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L62AT VHF-UHF Band Low Noise Amplifier Application Unit: mmVHF-UHF Band Oscillator Application Maximum Ratings (Ta == 25C) ==Rating Characteristics Symbol Unit Q1 Q2Collector-base voltage VCBO 10 10 VCollector-emitter voltage VCEO 5 5 VEmitter-base voltage VEBO 1.5 2 VCollector current IC 25 40 m
9.1. Size:75K toshiba
mt6l61as.pdf
MT6L61AS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L61AS VHF-UHF Band Low Noise Amplifier Application Unit: mmVHF-UHF Band Oscillator Application Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super mini (6-pin) ES6 package. Mounted Devices Q1 Q2Three pin SSM type part No. MT3S07S MT3
9.2. Size:71K toshiba
mt6l61ae.pdf
MT6L61AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L61AE VHF-UHF Band Low Noise Amplifier Application Unit: mmVHF-UHF Band Oscillator Application Maximum Ratings (Ta == 25C) ==Rating Characteristics Symbol Unit Q1 Q2Collector-base voltage VCBO 10 10 VCollector-emitter voltage VCEO 5 5 VEmitter-base voltage VEBO 1.5 2 VCollector current IC 25 40 m
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