2SC5996B Todos los transistores

SMALL-SIGNAL TRANSISTOR 2SC5996 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE Unit mm OUTLINE DRAWING DESCRIPTION ISAHAYA 2SC5996 is a super mini package resin sealed 2.1 silicon NPN epitaxial transistor for muting and switching. 0.425 0.425 application FEATURE High Emitter to Base voltage VEBO=50V High Reverse hFE Low ON RESIST

Ordering number ENN8029 2SC5999 NPN Epitaxial Planar Silicon Transistors 2SC5999 High-Current Switching Applications Applications Relay drivers, lamp drivers, motor drivers, inverters. Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Surface mount type. Specifications Absolute

Ordering number ENN8035 2SC5994 NPN Epitaxial Planar Silicon Transistor 2SC5994 High-Current Switching Applications Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Rat

2SC5998 Silicon NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0169-0100Z Rev.1.00 Apr.20.2004 Features High Transition Frequency fT = 11 GHz typ. High gain and Excellent Efficiency Maximum Available Gain (MAG) = +22 dB typ. at VCE = 3.6 V, IC= 100 mA, f = 500 MHz Power Added Efficiency (PAE) = 70% typ. at Pin=+16 dBm, f = 500 MHz High Collector to Emitter Vol

2SC5994 Bipolar Transistor 50V, 2A, Low VCE(sat), NPN Single www.onsemi.com Features Adoption of MBIT Process Low Collector to Emitter Saturation Voltage Large Current Capacity ELECTRICAL CONNECTION High Speed Switching 2 Typical Applications 1 Base Voltage Regulators 1 2 Collector 3 Emitter Relay Drivers Lamp Drivers 3 Electri

Product News Delivering high breakdown voltage plus high frequency characteristics. High-fT Transistors 2SA2140/2SC5993 Overview 2SA2140/2SC5993 high-fT transistors deliver a typical fT Unit mm value of 100MHz or higher at VCEO of 180V while featuring high-speed switching and low-saturation voltage characteristics. Making use of these transistors assists the production of power s

Power Transistors 2SC5993 Silicon NPN epitaxial planar type Unit mm 4.6 0.2 For power amplification 9.9 0.3 2.9 0.2 For TV VM circuit 3.2 0.1 Features Satisfactory linearity of forward current transfer ratio hFE High transition frequency (fT) 1.4 0.2 Full-pack package which can be installed to the heat sink with one 2.6 0.1 1.6 0.2 screw. 0.8 0.1 0.5

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5993 DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Complement to Type 2SA2140 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplification For TV VM circuit ABSOLUTE MAXIMUM RAT