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UN511F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: UN511F

Código: 6O

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 4.7 kOhm

Resistencia Base-Emisor R2 = 10 kOhm

Ratio típica de resistencia R1/R2 = 0.47

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 80 MHz

Ganancia de corriente contínua (hfe): 30

Empaquetado / Estuche: SC70

Búsqueda de reemplazo de transistor bipolar UN511F

 

UN511F Datasheet (PDF)

5.1. mun5112dw1.pdf Size:113K _upd

UN511F
UN511F

MUN5112DW1, NSBA124EDXV6, NSBA124EDP6 Dual PNP Bias Resistor Transistors http://onsemi.com R1 = 22 kW, R2 = 22 kW PIN CONNECTIONS PNP Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor wit

5.2. mun5111t1g mun5112t1g mun5113t1g mun5114t1g mun5115t1g mun5116t1g mun5130t1g mun5131t1g mun5132t1g mun5133t1g mun5134t1g mun5135t1g mun5136t1g mun5137t1g.pdf Size:171K _upd

UN511F
UN511F

MUN5111T1G Series, SMUN5111T1G, NSVMUN5111T1G Series Bias Resistor Transistors PNP Silicon Surface Mount Transistor http://onsemi.com with Monolithic Bias Resistor Network PNP SILICON This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor BIAS RESISTOR Transistor (BRT) contains a single transistor with a

 5.3. mun5111dw1t1g mun5112dw1t1g mun5113dw1t1g mun5114dw1t1g mun5115dw1t1g mun5116dw1t1g mun5130dw1t1g mun5131dw1t1g.pdf Size:198K _upd

UN511F
UN511F

MUN5111DW1T1G Series, SMUN5111DW1T1G Series Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors http://onsemi.com with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to

5.4. mun5111t1rev2.pdf Size:238K _motorola

UN511F
UN511F

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MUN5111T1/D Bias Resistor Transistor MUN5111T1 PNP Silicon Surface Mount Transistor with SERIES Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single

 5.5. mun5111.pdf Size:216K _motorola

UN511F
UN511F

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MUN5111DW1T1/D MUN5111DW1T1 Dual Bias Resistor Transistors SERIES PNP Silicon Surface Mount Transistors with Motorola Preferred Devices Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a basee

5.6. nsvmun5111dw1t3g.pdf Size:89K _onsemi

UN511F
UN511F

MUN5111DW1, NSBA114EDXV6, NSBA114EDP6 Dual PNP Bias Resistor Transistors http://onsemi.com R1 = 10 kW, R2 = 10 kW PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor wit

5.7. nsvmun5113dw1t3g.pdf Size:90K _onsemi

UN511F
UN511F

MUN5113DW1, NSBA144EDXV6, NSBA144EDP6 Dual PNP Bias Resistor Transistors http://onsemi.com R1 = 47 kW, R2 = 47 kW PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor wi

5.8. mun5111dw1t1-d.pdf Size:226K _onsemi

UN511F
UN511F

MUN5111DW1T1G Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single transistor with a http://onsemi.com monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to (3) (2)

5.9. mun5111t1-ser.pdf Size:141K _onsemi

UN511F
UN511F

MUN5111T1 Series Bias Resistor Transistors PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http://onsemi.com device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base

5.10. mun5111t1 6a-m sot323.pdf Size:125K _onsemi

UN511F
UN511F

MUN5111T1 SERIES Preferred Devices Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor http://onsemi.com Transistor) contains a single transistor with a monolithic bias network consisting of two resisto

5.11. unr511x un511x series.pdf Size:431K _panasonic

UN511F
UN511F

Transistors with built-in Resistor UNR511x Series (UN511x Series) Silicon PNP epitaxial planar type Unit: mm For digital circuits 0.15+0.10 0.3+0.1 –0.05 –0.0 3 ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts 1 2 • S-Mini type package, allowing automatic insertion through the tape/ magazine packing (0.65) (0.65)

5.12. mun5111dw.pdf Size:373K _wietron

UN511F
UN511F

MUN5111DW Series 6 5 4 6 Dual Bias Resistor Transistor 5 4 R 1 R 2 PNP Silicon Q 2 1 2 3 R Q 2 1 SOT-363(SC-88) R 1 1 2 3 ( T =25 C unless otherwise noted) M aximum R atings A Rating Symbol Value Unit Collector-Emitter Voltage V -50 CEO Vdc Vdc Collector-Base Voltage VCBO -50 Collector Current-Continuous IC mAdc -100 Thermal Characteristics Characteristics Symbol M

5.13. mun5111.pdf Size:174K _wietron

UN511F
UN511F

MUN5111 Series COLLECTOR Bias Resistor Transistor 3 3 PNP Silicon BASE R1 1 1 R2 2 2 SOT-323(SC-70) EMITTER ( T =25 C unless otherwise noted) M aximum R atings A Rating Symbol Value Unit Collector-Emitter Voltage V 50 CEO Vdc Vdc Collector-Base Voltage VCBO 50 Collector Current-Continuous IC mAdc 100 Thermal Characteristics Max Unit Characteristics Symbol Total Device Di

5.14. lmun5112dw1t1g lmun5113dw1t1g lmun5114dw1t1g lmun5115dw1t1g lmun5116dw1t1g lmun5130dw1t1g lmun5131dw1t1g lmun5132dw1t1g.pdf Size:918K _lrc

UN511F
UN511F

LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors LMUN5111DW1T1G Series with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias S-LMUN5111DW1T1G network consisting of two resistors; a series base resistor and a base–emitter resistor. These Series digital transistors are

5.15. lmun5111dw1t1g.pdf Size:918K _lrc

UN511F
UN511F

LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors LMUN5111DW1T1G Series with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias S-LMUN5111DW1T1G network consisting of two resistors; a series base resistor and a base–emitter resistor. These Series digital transistors are

5.16. lmun5111t1g lmun5112t1g lmun5113t1g lmun5114t1g lmun5115t1g lmun5116t1g lmun5130t1g lmun5131t1g lmun5132t1g lmun5133t1g lmun5134t1g lmun5135t1g lmun5136t1g lmun5137t1g.pdf Size:171K _lrc

UN511F



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