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UN511Z . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: UN511Z
   Código: FE
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 4.7 kOhm
   Resistencia Base-Emisor R2 = 22 kOhm
   Ratio típica de resistencia R1/R2 = 0.21

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 80 MHz
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: SC70

 Búsqueda de reemplazo de transistor bipolar UN511Z

 

UN511Z Datasheet (PDF)

 9.1. Size:216K  motorola
mun5111.pdf

UN511Z
UN511Z

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MUN5111DW1T1/DMUN5111DW1T1Dual Bias Resistor TransistorsSERIESPNP Silicon Surface Mount Transistors withMotorola Preferred DevicesMonolithic Bias Resistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor with a monolithicbias network consisting of two resistors; a series base resistor and a bas

 9.2. Size:238K  motorola
mun5111t1rev2.pdf

UN511Z
UN511Z

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MUN5111T1/DBias Resistor TransistorMUN5111T1PNP Silicon Surface Mount Transistor withSERIESMonolithic Bias Resistor NetworkMotorola Preferred DevicesThis new series of digital transistors is designed to replace a single device and itsexternal resistor bias network. The BRT (Bias Resistor Transistor) contains a singl

 9.3. Size:195K  onsemi
mun5116dw1 nsba143tdxv6.pdf

UN511Z
UN511Z

MUN5116DW1,NSBA143TDXV6Dual PNP Bias ResistorTransistorsR1 = 4.7 kW, R2 = 8 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkThis series of digital transistors is designed to replace a single (3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic biasR1 R

 9.4. Size:226K  onsemi
mun5111dw1t1-d.pdf

UN511Z
UN511Z

MUN5111DW1T1G SeriesPreferred DevicesDual Bias ResistorTransistorsPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThe Bias Resistor Transistor (BRT) contains a single transistor with ahttp://onsemi.commonolithic bias network consisting of two resistors; a series base resistorand a base-emitter resistor. These digital transistors are designed to(3) (

 9.5. Size:125K  onsemi
mun5111t1 6a-m sot323.pdf

UN511Z
UN511Z

MUN5111T1 SERIESPreferred DevicesBias Resistor TransistorPNP Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias Resistorhttp://onsemi.comTransistor) contains a single transistor with a monolithic bias networkconsisting of two resi

 9.6. Size:113K  onsemi
mun5112dw1.pdf

UN511Z
UN511Z

MUN5112DW1,NSBA124EDXV6,NSBA124EDP6Dual PNP Bias ResistorTransistorshttp://onsemi.comR1 = 22 kW, R2 = 22 kWPIN CONNECTIONSPNP Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor wit

 9.7. Size:141K  onsemi
mun5111t1-ser.pdf

UN511Z
UN511Z

MUN5111T1 SeriesBias Resistor TransistorsPNP Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic biasnetwork consisting of two resistors; a series ba

 9.8. Size:171K  onsemi
mun5111t1g mun5112t1g mun5113t1g mun5114t1g mun5115t1g mun5116t1g mun5130t1g mun5131t1g mun5132t1g mun5133t1g mun5134t1g mun5135t1g mun5136t1g mun5137t1g.pdf

UN511Z
UN511Z

MUN5111T1G Series,SMUN5111T1G,NSVMUN5111T1G SeriesBias Resistor TransistorsPNP Silicon Surface Mount Transistorhttp://onsemi.comwith Monolithic Bias Resistor NetworkPNP SILICONThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorBIAS RESISTORTransistor (BRT) contains a single transistor with a

 9.9. Size:198K  onsemi
mun5111dw1t1g mun5112dw1t1g mun5113dw1t1g mun5114dw1t1g mun5115dw1t1g mun5116dw1t1g mun5130dw1t1g mun5131dw1t1g.pdf

UN511Z
UN511Z

MUN5111DW1T1G Series,SMUN5111DW1T1G SeriesDual Bias ResistorTransistorsPNP Silicon Surface Mount Transistorshttp://onsemi.comwith Monolithic Bias Resistor NetworkThe Bias Resistor Transistor (BRT) contains a single transistor with amonolithic bias network consisting of two resistors; a series base resistorand a base-emitter resistor. These digital transistors are designed to

 9.10. Size:90K  onsemi
nsvmun5113dw1t3g.pdf

UN511Z
UN511Z

MUN5113DW1,NSBA144EDXV6,NSBA144EDP6Dual PNP Bias ResistorTransistorshttp://onsemi.comR1 = 47 kW, R2 = 47 kWPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1) This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wi

 9.11. Size:89K  onsemi
nsvmun5111dw1t3g.pdf

UN511Z
UN511Z

MUN5111DW1,NSBA114EDXV6,NSBA114EDP6Dual PNP Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 10 kWPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit

 9.12. Size:431K  panasonic
unr511x un511x series.pdf

UN511Z
UN511Z

Transistors with built-in ResistorUNR511x Series (UN511x Series)Silicon PNP epitaxial planar typeUnit: mmFor digital circuits0.15+0.100.3+0.10.050.03 Features Costs can be reduced through downsizing of the equipment andreduction of the number of parts1 2 S-Mini type package, allowing automatic insertion through the tape/magazine packing (0.65) (0.65)

 9.13. Size:174K  wietron
mun5111.pdf

UN511Z
UN511Z

MUN5111 SeriesCOLLECTORBias Resistor Transistor33PNP SiliconBASER111R222SOT-323(SC-70)EMITTER( T =25 C unless otherwise noted)M aximum R atings ARating Symbol Value UnitCollector-Emitter Voltage V 50CEO VdcVdcCollector-Base Voltage VCBO 50Collector Current-Continuous IC mAdc100Thermal CharacteristicsMax UnitCharacteristics SymbolTotal Device

 9.14. Size:373K  wietron
mun5111dw.pdf

UN511Z
UN511Z

MUN5111DW Series6 546Dual Bias Resistor Transistor54R1R2PNP Silicon Q2123R Q21SOT-363(SC-88)R11 2 3( T =25 C unless otherwise noted)M aximum R atings ARating Symbol Value UnitCollector-Emitter Voltage V -50CEO VdcVdcCollector-Base Voltage VCBO -50Collector Current-Continuous IC mAdc-100Thermal CharacteristicsCharacteristics Symbo

 9.15. Size:918K  lrc
lmun5111dw1t1g lmun5112dw1t1g lmun5113dw1t1g lmun5114dw1t1g lmun5115dw1t1g lmun5116dw1t1g lmun5130dw1t1g lmun5131dw1t1g lmun5132dw1t1g.pdf

UN511Z
UN511Z

LESHAN RADIO COMPANY, LTD.Dual Bias Resistor TransistorsPNP Silicon Surface Mount TransistorsLMUN5111DW1T1GSerieswith Monolithic Bias Resistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias S-LMUN5111DW1T1Gnetwork consisting of two resistors; a series base resistor and a baseemitter resistor. TheseSeriesdigital transistors are

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