2SA1126 Todos los transistores

 8.1. Size:86K  renesas
 r07ds0271ej 2sa1121-1.pdf

Preliminary Datasheet R07DS0271EJ0300 2SA1121 (Previous REJ03G0636-0200) Rev.3.00 Silicon PNP Epitaxial Mar 28, 2011 Application Low frequency amplifier Complementary pair with 2SC2618 Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 1. Emitter 3 2. Base 3. Collector 1 2 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collec

 8.2. Size:103K  nec
 2sa1129.pdf

DATA SHEET SILICON POWER TRANSISTOR 2SA1129 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SA1129 is a mold power transistor developed for mid-speed ORDERING INFORMATION switching, and is ideal for use as a ramp driver. Part No. Package 2SA1129 TO-220AB FEATURES Large current capacity with small package IC(DC) = -7.0 A (TO-220AB)

 8.3. Size:40K  panasonic
 2sa1124 e.pdf

Transistor 2SA1124 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm Complementary to 2SC2632 5.9 0.2 4.9 0.2 Features Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO. 0.7 0.1 Small collector output capacitance Cob. Makes up a complementary pair with 2SC

 8.4. Size:36K  panasonic
 2sa1128.pdf

Transistor 2SA1128 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Optimum for low-voltage operation and for converter circuits. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 25 V 0.45 0.1 0.45 0.1

 8.5. Size:40K  panasonic
 2sa1128 e.pdf

Transistor 2SA1128 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Optimum for low-voltage operation and for converter circuits. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 25 V 0.45 0.1 0.45 0.1

 8.6. Size:36K  panasonic
 2sa1123.pdf

Transistor 2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm Complementary to 2SC2631 5.0 0.2 4.0 0.2 Features Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Makes up a complementary pair with 2SC2631, which

 8.7. Size:41K  panasonic
 2sa1127 e.pdf

Transistor 2SA1127 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SC2634 5.0 0.2 4.0 0.2 Features Low noise characteristics. High foward current transfer ratio hFE. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 60 V 0.45 0.1 0.45 0.1 Collector to e

 8.8. Size:40K  panasonic
 2sa1123 e.pdf

Transistor 2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm Complementary to 2SC2631 5.0 0.2 4.0 0.2 Features Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Makes up a complementary pair with 2SC2631, which

 8.9. Size:36K  panasonic
 2sa1124.pdf

Transistor 2SA1124 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm Complementary to 2SC2632 5.9 0.2 4.9 0.2 Features Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO. 0.7 0.1 Small collector output capacitance Cob. Makes up a complementary pair with 2SC

 8.10. Size:37K  panasonic
 2sa1127.pdf

Transistor 2SA1127 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SC2634 5.0 0.2 4.0 0.2 Features Low noise characteristics. High foward current transfer ratio hFE. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 60 V 0.45 0.1 0.45 0.1 Collector to e

 8.11. Size:24K  hitachi
 2sa1122.pdf

2SA1122 Silicon PNP Epitaxial Application Low frequency amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SA1122 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 55 V Collector to emitter voltage VCEO 55 V Emitter to base voltage VEBO 5 V Collector current IC 100 mA Collector power dissipation PC 150 mW Ju

 8.12. Size:24K  hitachi
 2sa1121.pdf

2SA1121 Silicon PNP Epitaxial Application Low frequency amplifier Complementary pair with 2SC2618 Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SA1121 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 4 V Collector current IC 500 mA

 8.13. Size:180K  jmnic
 2sa1129.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1129 DESCRIPTION With TO-220 package Low collector saturation voltage Large current capacity Complement to type 2SC2654 APPLICATIONS For low-frequency power amplifiers and mid-speed switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified

 8.14. Size:146K  jmnic
 2sa1120.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1120 DESCRIPTION With TO-126 package High transition frequency Low collector saturation voltage APPLICATIONS Audio power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNI

 8.15. Size:175K  jmnic
 2sa1125.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1125 DESCRIPTION With TO-220 package Complement to type 2SC2633 High breakdown voltage APPLICATIONS For audio frequency high voltage amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximu

 8.16. Size:583K  kexin
 2sa1122.pdf

SMD Type or SMD Type TransistICs PNP Transistors 2SA1122 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 Features 3 Low frequency amplifier 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -55 V Collector to emitter voltage VCEO -55 V Emitter to base vol

 8.17. Size:766K  kexin
 2sa1121.pdf

SMD Type or SMD Type TransistICs PNP Transistors 2SA1121 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Low frequency amplifier Complementary pair with 2SC2618 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -35 V Collector to emitter

 8.18. Size:291K  lzg
 2sa1129 3ca1129.pdf

2SA1129(3CA1129) PNP /SILICON PNP TRANSISTOR Purpose For low-frequency power amplifiers and mid-speed switching. , 2SC2654(3DA2654) Features Large current capacity with small package, low collector saturation voltage, pair with 2SC2654(3DA2654). /Absolute

 8.19. Size:220K  inchange semiconductor
 2sa1129.pdf

isc Silicon PNP Power Transistor 2SA1129 DESCRIPTION Low Collector Saturation Voltage V = -0.3(V)(Max)@I = -3A CE(sat) C Large Current Capability-I = -7A C Complement to Type 2SC2654 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for mid-switching applications, and is ideal for use as a ramp driver. ABSOLUTE MAXIM

 8.20. Size:216K  inchange semiconductor
 2sa1120.pdf

 8.21. Size:178K  inchange semiconductor
 2sa1125.pdf

isc Silicon PNP Power Transistor 2SA1125 DESCRIPTION Low Collector Saturation Voltage Large Current Capability Complement to Type 2SC2633 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency high voltage amplifier application ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector