3DD100C Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3DD100C
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-base (Vcb): 250 V
Tensión colector-emisor (Vce): 200 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 40
Encapsulados: TO-66
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3DD100C datasheet
3dd100c.pdf
E Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD100C DESCRIPTION With TO-66 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMU
3dd100e.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD100E DESCRIPTION With TO-66 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE
3dd100b.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD100B DESCRIPTION With TO-66 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 )
Otros transistores... 3CD9C , 3CD9D , 3CD9F , 3CF20D , 3DA98 , 3DA98J , 3DD100A , 3DD100B , BC549 , 3DD100D , 3DD100E , 3DD101A , 3DD101B , 3DD101C , 3DD101D , 3DD101E , 3DD102A .
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