3DD101B Todos los transistores

 

3DD101B Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 3DD101B

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 50 W

Tensión colector-base (Vcb): 200 V

Tensión colector-emisor (Vce): 150 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO-3

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3DD101B datasheet

 ..1. Size:183K  inchange semiconductor
3dd101b.pdf pdf_icon

3DD101B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD101B DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE

 8.1. Size:150K  china
3dd101.pdf pdf_icon

3DD101B

3DD101/3DD102 NPN A B C D E F PCM TC=75 50 W ICM 5 A Tjm 175 Tstg -55 150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=3mA 100 150 200 250 300 350 V V(BR)CEO ICE=3mA 50 100 150 200 250 300 V V(BR)EBO IEB=1mA 4.0 V ICBO VCB=50V 0.

 8.2. Size:182K  inchange semiconductor
3dd101e.pdf pdf_icon

3DD101B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD101E DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE

 8.3. Size:191K  inchange semiconductor
3dd101a.pdf pdf_icon

3DD101B

isc Silicon NPN Power Transistor 3DD101A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO DC Current Gain- h = 20(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 0.8V(Max)@ I = 2.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier,DC-DC converter

Otros transistores... 3DA98 , 3DA98J , 3DD100A , 3DD100B , 3DD100C , 3DD100D , 3DD100E , 3DD101A , BC639 , 3DD101C , 3DD101D , 3DD101E , 3DD102A , 3DD102D , 3DD103E , 3DD104A , 3DD104B .

History: 2SC2056 | 2SC2060 | 2SC3142

 

 

 

 

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