3DD102A Todos los transistores

 

3DD102A Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 3DD102A

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 50 W

Tensión colector-base (Vcb): 150 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO-3

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3DD102A datasheet

 ..1. Size:209K  inchange semiconductor
 3dd102a.pdf pdf_icon

3DD102A

isc Silicon NPN Power Transistor 3DD102A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO DC Current Gain- h = 20(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 0.8V(Max)@ I = 2.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier , DC Transform

 8.1. Size:150K  china
 3dd102.pdf pdf_icon

3DD102A

3DD101/3DD102 NPN A B C D E F PCM TC=75 50 W ICM 5 A Tjm 175 Tstg -55 150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=3mA 100 150 200 250 300 350 V V(BR)CEO ICE=3mA 50 100 150 200 250 300 V V(BR)EBO IEB=1mA 4.0 V ICBO VCB=50V 0.

 8.2. Size:182K  inchange semiconductor
 3dd102d.pdf pdf_icon

3DD102A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD102D DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor For aud

 8.3. Size:210K  inchange semiconductor
 3dd102c.pdf pdf_icon

3DD102A

isc Silicon NPN Power Transistor 3DD102C DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min.) (BR)CEO DC Current Gain- h = 20(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 1.5V(Max)@ I = 2.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier , DC Transform

MOSTRAR MÁS

Otros transistores... 3DD100C , 3DD100D , 3DD100E , 3DD101A , 3DD101B , 3DD101C , 3DD101D , 3DD101E , TIP142 , 3DD102D , 3DD103E , 3DD104A , 3DD104B , 3DD104C , 3DD104D , 3DD104E , 3DD159A .

 

 

 

 

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