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3DD104D . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 3DD104D
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 50 W
   Tensión colector-base (Vcb): 1200 V
   Tensión colector-emisor (Vce): 600 V
   Tensión emisor-base (Veb): 8 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO-3

 Búsqueda de reemplazo de transistor bipolar 3DD104D

 

3DD104D Datasheet (PDF)

 ..1. Size:183K  inchange semiconductor
3dd104d.pdf

3DD104D
3DD104D

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD104DDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

 8.1. Size:24K  shaanxi
3dd104.pdf

3DD104D

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD104NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97 4. Use for Low-speed sw

 8.2. Size:183K  inchange semiconductor
3dd104e.pdf

3DD104D
3DD104D

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD104EDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

 8.3. Size:182K  inchange semiconductor
3dd104c.pdf

3DD104D
3DD104D

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD104CDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

 8.4. Size:182K  inchange semiconductor
3dd104a.pdf

3DD104D
3DD104D

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD104ADESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

 8.5. Size:204K  inchange semiconductor
3dd104b.pdf

3DD104D
3DD104D

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD104BDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

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