3DD200D Todos los transistores

 

3DD200D . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 3DD200D
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 200 W
   Tensión colector-base (Vcb): 250 V
   Tensión colector-emisor (Vce): 200 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 20 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 5
   Paquete / Cubierta: TO-3
 
   - Selección ⓘ de transistores por parámetros

 

3DD200D Datasheet (PDF)

 ..1. Size:205K  inchange semiconductor
3dd200d.pdf pdf_icon

3DD200D

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD200DDESCRIPTIONExcellent Safe Operating AreaHigh DC Current Gain-h =15(Min)@I = 8AFE CLow Saturation Voltage-: V )= 1.4V(Max)@ I = 8ACE(sat CMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for high power audio ,disk head positioners andother linear

 8.1. Size:207K  inchange semiconductor
3dd200.pdf pdf_icon

3DD200D

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD200DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEODC Current Gain-: h = 30~120(Min.)@I = 2AFE CCollector-Emitter Saturation Voltage-: V )= 1.5V(Max)@ I = 3ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B&W TV

 9.1. Size:1353K  jilin sino
3dd209l.pdf pdf_icon

3DD200D

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD209L MAIN CHARACTERISTICS Package I 12A CV 400V CEOP C 120W APPLICATIONS Energy-saving light Electronic ballasts High frequency switching power supply

 9.2. Size:151K  china
3dd203.pdf pdf_icon

3DD200D

3DD203 NPN A B C D E F PCM TC=75 10 W ICM 1 A Tjm 175 Tstg -55~150 VCE=10V Rth 10 /W IC=0.3A V(BR)CBO ICB=1mA 80 150 200 250 350 450 V V(BR)CEO ICE=1mA 50 100 150 200 250 300 V V(BR)EBO IEB=1mA 4.0 V ICBO VCB=50V 0.1 mA

Otros transistores... 3DD159E , 3DD159F , 3DD167A , 3DD167B , 3DD167C , 3DD167D , 3DD167E , 3DD167F , 2N5551 , 3DD202A , 3DD202B , 3DD208 , 3DD523 , 3DD880 , 3DD880X , 3DF1A , 3DF1B .

 

 
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