3DD202B Datasheet. Equivalente

 ..1. Size:192K  inchange semiconductor
 3dd202b.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD202B DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 )

 8.1. Size:146K  china
 3dd2028ll.pdf

3DD2028LL NPN A B C D PCM Tc=75 50 W ICM 3 A Tjm 175 Tstg -55 150 VCE=10V Rth 2 /W IC=1A V(BR)CBO ICB=5mA 1100 1400 1600 1800 V V(BR)CEO ICE=5mA 500 600 800 1000 V V(BR)EBO IEB=0.5mA 8.0 V ICBO VCB=1000V 0.3 mA VBEsat

 8.2. Size:192K  inchange semiconductor
 3dd202a.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD202A DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 )

 9.1. Size:1353K  jilin sino
 3dd209l.pdf

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD209L MAIN CHARACTERISTICS Package I 12A C V 400V CEO P C 120W APPLICATIONS Energy-saving light Electronic ballasts High frequency switching power supply

 9.2. Size:151K  china
 3dd203.pdf

3DD203 NPN A B C D E F PCM TC=75 10 W ICM 1 A Tjm 175 Tstg -55 150 VCE=10V Rth 10 /W IC=0.3A V(BR)CBO ICB=1mA 80 150 200 250 350 450 V V(BR)CEO ICE=1mA 50 100 150 200 250 300 V V(BR)EBO IEB=1mA 4.0 V ICBO VCB=50V 0.1 mA

 9.3. Size:144K  china
 3dd2073.pdf

3DD2073 NPN PCM Tc=25 25 W ICM 1.5 A Tjm 175 Tstg -55 150 VCE=10V Rth 4 /W IC=0.8A V(BR)CBO ICB=1mA 150 V V(BR)CEO ICE=1mA 150 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=120V 10 mA IEBO VEB=5V 10 mA VBEsat 3.0 Ic=0.5A V IB=0.05

 9.4. Size:151K  china
 3dd204.pdf

3DD204 NPN A B C D E F PCM TC=75 30 W ICM 3 A Tjm 175 Tstg -55 150 VCE=10V Rth 3.33 /W IC=0.6A V(BR)CBO ICE=1mA 100 150 200 250 300 350 V V(BR)CEO ICB=1mA 50 100 150 200 250 300 V V(BR)EBO IEB=1mA 4.0 V ICBO VCB=50V 0.1 mA

 9.5. Size:202K  inchange semiconductor
 3dd208.pdf

isc Silicon NPN Power Transistor 3DD208 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min.) (BR)CEO DC Current Gain- h = 30 250(Min.)@I = 0.5A FE C Collector-Emitter Saturation Voltage- V )= 2.0V(Max)@ I = 1A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and powe

 9.6. Size:205K  inchange semiconductor
 3dd200d.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD200D DESCRIPTION Excellent Safe Operating Area High DC Current Gain-h =15(Min)@I = 8A FE C Low Saturation Voltage- V )= 1.4V(Max)@ I = 8A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for high power audio ,disk head positioners and other linear

 9.7. Size:204K  inchange semiconductor
 3dd201.pdf

isc Silicon NPN Power Transistor 3DD201 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min.) (BR)CEO DC Current Gain- h = 40 120(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 1.5V(Max)@ I = 5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal output applicati

 9.8. Size:212K  inchange semiconductor
 3dd209l.pdf

isc Silicon NPN Power Transistor 3DD209L DESCRIPTION High breakdown voltage High switching speed High current capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Energy-saving light Electronic ballasts High frequency switching power supply High frequency power transform ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

 9.9. Size:193K  inchange semiconductor
 3dd207.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD207 DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor For audio amplifier applications

 9.10. Size:207K  inchange semiconductor
 3dd200.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD200 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO DC Current Gain- h = 30 120(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 1.5V(Max)@ I = 3A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B&W TV