3DD202B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD202BDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)

3DD2028LL NPN A B C D PCM Tc=75 50 W ICM 3 A Tjm 175 Tstg -55~150 VCE=10V Rth 2 /W IC=1A V(BR)CBO ICB=5mA 1100 1400 1600 1800 V V(BR)CEO ICE=5mA 500 600 800 1000 V V(BR)EBO IEB=0.5mA 8.0 V ICBO VCB=1000V 0.3 mA VBEsat

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD202ADESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD209L MAIN CHARACTERISTICS Package I 12A CV 400V CEOP C 120W APPLICATIONS Energy-saving light Electronic ballasts High frequency switching power supply

3DD203 NPN A B C D E F PCM TC=75 10 W ICM 1 A Tjm 175 Tstg -55~150 VCE=10V Rth 10 /W IC=0.3A V(BR)CBO ICB=1mA 80 150 200 250 350 450 V V(BR)CEO ICE=1mA 50 100 150 200 250 300 V V(BR)EBO IEB=1mA 4.0 V ICBO VCB=50V 0.1 mA

3DD2073 NPN PCM Tc=25 25 W ICM 1.5 A Tjm 175 Tstg -55~150 VCE=10V Rth 4 /W IC=0.8A V(BR)CBO ICB=1mA 150 V V(BR)CEO ICE=1mA 150 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=120V 10 mA IEBO VEB=5V 10 mA VBEsat 3.0 Ic=0.5A V IB=0.05

3DD204 NPN A B C D E F PCM TC=75 30 W ICM 3 A Tjm 175 Tstg -55~150 VCE=10V Rth 3.33 /W IC=0.6A V(BR)CBO ICE=1mA 100 150 200 250 300 350 V V(BR)CEO ICB=1mA 50 100 150 200 250 300 V V(BR)EBO IEB=1mA 4.0 V ICBO VCB=50V 0.1 mA

isc Silicon NPN Power Transistor 3DD208DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min.)(BR)CEODC Current Gain-: h = 30~250(Min.)@I = 0.5AFE CCollector-Emitter Saturation Voltage-: V )= 2.0V(Max)@ I = 1ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and powe

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD200DDESCRIPTIONExcellent Safe Operating AreaHigh DC Current Gain-h =15(Min)@I = 8AFE CLow Saturation Voltage-: V )= 1.4V(Max)@ I = 8ACE(sat CMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for high power audio ,disk head positioners andother linear

isc Silicon NPN Power Transistor 3DD201DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min.)(BR)CEODC Current Gain-: h = 40~120(Min.)@I = 2AFE CCollector-Emitter Saturation Voltage-: V )= 1.5V(Max)@ I = 5ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal output applicati

isc Silicon NPN Power Transistor 3DD209LDESCRIPTIONHigh breakdown voltageHigh switching speedHigh current capabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEnergy-saving lightElectronic ballastsHigh frequency switching power supplyHigh frequency power transformABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD207DESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorFor audio amplifier applications

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD200DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEODC Current Gain-: h = 30~120(Min.)@I = 2AFE CCollector-Emitter Saturation Voltage-: V )= 1.5V(Max)@ I = 3ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B&W TV