2SA1133 Todos los transistores

 

2SA1133 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SA1133
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 200 V
   Tensión colector-emisor (Vce): 150 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 40 MHz
   Capacitancia de salida (Cc): 70 pF
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: TO220
 
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2SA1133 Datasheet (PDF)

 ..1. Size:156K  jmnic
2sa1133 2sa1133a.pdf pdf_icon

2SA1133

JMnic Product Specification Silicon PNP Power Transistors 2SA1133 2SA1133A DESCRIPTION With TO-220 package High breakdown voltage High power dissipation Complement to type 2SC2660/2660A APPLICATIONS For power amplifier and TV vertical deflection output applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified

 ..2. Size:219K  inchange semiconductor
2sa1133.pdf pdf_icon

2SA1133

isc Silicon PNP Power Transistor 2SA1133DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -150V (Min)(BR)CEOLarge Collector Power DissipationComplement to Type 2SC2660Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and TV vertical deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(Ta

 ..3. Size:90K  inchange semiconductor
2sa1133 2sa1133a.pdf pdf_icon

2SA1133

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1133 2SA1133A DESCRIPTION With TO-220 package High breakdown voltage High power dissipation Complement to type 2SC2660/2660A APPLICATIONS For power amplifier and TV vertical deflection output applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base

 0.1. Size:209K  inchange semiconductor
2sa1133a.pdf pdf_icon

2SA1133

isc Silicon PNP Power Transistor 2SA1133ADESCRIPTIONCollector-Emitter Breakdown Voltage-V = -180V (Min)(BR)CEOLarge Collector Power DissipationComplement to Type 2SC2660AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and TV vertical deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(

Otros transistores... 2SA1123 , 2SA1124 , 2SA1125 , 2SA1126 , 2SA1127 , 2SA1128 , 2SA1129 , 2SA113 , TIP31 , 2SA1133A , 2SA1135 , 2SA1136 , 2SA1137 , 2SA1138 , 2SA114 , 2SA1141 , 2SA1142 .

 

 
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