2SA1133 Todos los transistores

 ..1. Size:156K  jmnic
 2sa1133 2sa1133a.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1133 2SA1133A DESCRIPTION With TO-220 package High breakdown voltage High power dissipation Complement to type 2SC2660/2660A APPLICATIONS For power amplifier and TV vertical deflection output applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified

 ..2. Size:219K  inchange semiconductor
 2sa1133.pdf

isc Silicon PNP Power Transistor 2SA1133 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V (Min) (BR)CEO Large Collector Power Dissipation Complement to Type 2SC2660 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta

 ..3. Size:90K  inchange semiconductor
 2sa1133 2sa1133a.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1133 2SA1133A DESCRIPTION With TO-220 package High breakdown voltage High power dissipation Complement to type 2SC2660/2660A APPLICATIONS For power amplifier and TV vertical deflection output applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base

 0.1. Size:209K  inchange semiconductor
 2sa1133a.pdf

isc Silicon PNP Power Transistor 2SA1133A DESCRIPTION Collector-Emitter Breakdown Voltage- V = -180V (Min) (BR)CEO Large Collector Power Dissipation Complement to Type 2SC2660A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(

 8.1. Size:37K  no
 2sa1135.pdf

 8.2. Size:149K  jmnic
 2sa1135.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1135 DESCRIPTION With TO-3PN package Complement to type 2SC2665 APPLICATIONS For general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALU

 8.3. Size:217K  inchange semiconductor
 2sa1135.pdf

isc Silicon PNP Power Transistor 2SA1135 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2665 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll