2SA1135 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1135
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 55 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 10 MHz
Capacitancia de salida (Cc): 100 pF
Ganancia de corriente contínua (hFE): 90
Encapsulados: TO218
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2SA1135 datasheet
2sa1135.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1135 DESCRIPTION With TO-3PN package Complement to type 2SC2665 APPLICATIONS For general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALU
2sa1135.pdf
isc Silicon PNP Power Transistor 2SA1135 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2665 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll
2sa1133 2sa1133a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1133 2SA1133A DESCRIPTION With TO-220 package High breakdown voltage High power dissipation Complement to type 2SC2660/2660A APPLICATIONS For power amplifier and TV vertical deflection output applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified
Otros transistores... 2SA1125 , 2SA1126 , 2SA1127 , 2SA1128 , 2SA1129 , 2SA113 , 2SA1133 , 2SA1133A , TIP31 , 2SA1136 , 2SA1137 , 2SA1138 , 2SA114 , 2SA1141 , 2SA1142 , 2SA1143 , 2SA1144 .
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