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UPA805T . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: UPA805T

Código: T82

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.06 W

Tensión colector-base (Vcb): 9 V

Tensión colector-emisor (Vce): 6 V

Tensión emisor-base (Veb): 2 V

Corriente del colector DC máxima (Ic): 0.01 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 12000 MHz

Capacitancia de salida (Cc): 0.3 pF

Ganancia de corriente contínua (hfe): 75

Empaquetado / Estuche: SOT-363

Búsqueda de reemplazo de transistor bipolar UPA805T

 

UPA805T Datasheet (PDF)

1.1. upa805t.pdf Size:34K _update_bjt

UPA805T
UPA805T

PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA805T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD FEATURES PACKAGE DRAWINGS • Low Noise, High Gain (Unit: mm) • Operable at Low Voltage 2.1±0.1 • Small Feed-back Capacitance 1.25±0.1 Cre = 0.3 pF TYP. • Built-in 2 Transistors (2 × 2SC4958) ORDERING INFORMATION PART NUMB

5.1. upa801t.pdf Size:51K _update_bjt

UPA805T
UPA805T

DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA801TC NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC5006) FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High g

5.2. upa807t t84 sot363.pdf Size:31K _nec

UPA805T
UPA805T

DATA SHEET SILICON TRANSISTOR PA807T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD FEATURES PACKAGE DRAWINGS Low Current, High Gain (Unit: mm) |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz 2.10.1 |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz 1.250.1 A Super Mini Mold Package Adopted Built-in 2 Transis

 5.3. upa808t.pdf Size:186K _nec

UPA805T
UPA805T

NPN SILICON HIGH UPA808T FREQUENCY TRANSISTOR FEATURES OUTLINE DIMENSIONS (Units in mm) SMALL PACKAGE STYLE: PACKAGE OUTLINE S06 2 NE687 Die in a 2 mm x 1.25 mm package (Top View) LOW NOISE FIGURE: 2.1 0.1 NF = 1.3 dB TYP at 2 GHz HIGH GAIN: 1.25 0.1 |S21E|2 = 8.5 dB TYP at 2 GHz LOW CURRENT OPERATION 1 6 0.65 DESCRIPTION 2.0 0.2 0.2 (All Leads) NEC's UPA808T is

5.4. upa802t.pdf Size:198K _nec

UPA805T
UPA805T

NPN SILICON HIGH UPA802T FREQUENCY TRANSISTOR FEATURES OUTLINE DIMENSIONS (Units in mm) SMALL PACKAGE STYLE: PACKAGE OUTLINE S06 2 NE681 Die in a 2 mm x 1.25 mm package (Top View) LOW NOISE FIGURE: 2.1 0.1 NF = 1.4 dB TYP at 1 GHz 1.25 0.1 HIGH GAIN: |S21E|2 = 12 dB TYP at 1 GHz HIGH GAIN BANDWIDTH: fT = 7 GHz 1 6 LOW CURRENT OPERATION 0.65 2.0 0.2 0.2 (All Leads

 5.5. upa806t t83 sot363.pdf Size:30K _nec

UPA805T
UPA805T

PRELIMINARY DATA SHEET SILICON TRANSISTOR PA806T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD FEATURES PACKAGE DRAWINGS Low Noise, High Gain (Unit: mm) Operable at Low Voltage 2.10.1 Small Feed-back Capacitance 1.250.1 Cre = 0.4 pF TYP. Built-in 2 Transistors (2 ? 2SC4959) ORDERING INFORMATION PART NUMBER QUANTITY PAC

5.6. upa804 t76 t77 sot363.pdf Size:34K _nec

UPA805T
UPA805T

PRELIMINARY DATA SHEET SILICON TRANSISTOR PA804T NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The 2SC4571 has built-in 2 transistors which were developed for UHF. PACKAGE DRAWINGS (Unit: mm) FEATURES 2.10.1 High fT 1.250.1 fT = 5.0 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz) Small Collector Capacitance Cob = 0.9 pF TYP. (@ VCB = 5 V, IE = 0, f = 1 MHz

5.7. upa801 r24 r25 sot363.pdf Size:32K _nec

UPA805T
UPA805T

PRELIMINARY DATA SHEET SILICON TRANSISTOR PA801T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 6-PIN 2 ELEMENTS) MINI MOLD The PA801T has built-in 2 low-voltage transistors which are designed PACKAGE DRAWINGS to amplify low noise in the VHF band to the UHF band. (Unit: mm) 2.10.1 FEATURES 1.250.1 Low Noise NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3

5.8. upa802 r34 r35 sot363.pdf Size:31K _nec

UPA805T
UPA805T

PRELIMINARY DATA SHEET SILICON TRANSISTOR PA802T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The PA802T has built-in 2 low-voltage transistors which are designed PACKAGE DRAWINGS to amplify low noise in the VHF band to the UHF band. (Unit: mm) 2.10.1 FEATURES 1.250.1 Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, I

5.9. upa808t t86 sot363.pdf Size:37K _nec

UPA805T
UPA805T

DATA SHEET SILICON TRANSISTOR PA808T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD FEATURES PACKAGE DRAWINGS Low Noise (Unit: mm) NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz 2.10.1 NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz 1.250.1 A Super Mini Mold Package Adopted Built-in 2 Transistors (2 ? 2SC5184) O

5.10. upa800t.pdf Size:192K _nec

UPA805T
UPA805T

NPN SILICON HIGH UPA800T FREQUENCY TRANSISTOR FEATURES OUTLINE DIMENSIONS (Units in mm) SMALL PACKAGE STYLE: PACKAGE OUTLINE S06 (Top View) 2 NE680 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: 2.1 0.1 NF = 1.9 dB TYP at 2 GHz 1.25 0.1 HIGH GAIN: |S21E|2 = 7.5 dB TYP at 2 GHz EXCELLENT LOW VOLTAGE, LOW CURRENT 1 6 0.65 PERFORMANCE 2.0 0.2 0.2 (All Leads) 5 2

5.11. upa801t.pdf Size:177K _nec

UPA805T
UPA805T

NPN SILICON HIGH UPA801T FREQUENCY TRANSISTOR FEATURES OUTLINE DIMENSIONS (Units in mm) SMALL PACKAGE STYLE: PACKAGE OUTLINE S06 2 NE856 Die in a 2 mm x 1.25 mm package (Top View) LOW NOISE FIGURE: 2.1 0.1 NF = 1.2 dB TYP at 1 GHz 1.25 0.1 HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz HIGH COLLECTOR CURRENT: 100mA 1 6 0.65 2.0 0.2 0.2 (All Leads) 5 2 DESCRIPTION 1.3

5.12. upa807t.pdf Size:214K _nec

UPA805T
UPA805T

NPN SILICON HIGH UPA807T FREQUENCY TRANSISTOR FEATURES OUTLINE DIMENSIONS (Units in mm) SMALL PACKAGE STYLE: PACKAGE OUTLINE S06 2 NE686 Die in a 2 mm x 1.25 mm package (Top View) LOW NOISE FIGURE: 2.1 0.1 NF = 1.5 dB TYP at 2 GHz 1.25 0.1 HIGH GAIN: |S21E|2 = 9 dB TYP at 2 GHz HIGH GAIN BANDWIDTH: fT = 13 GHz 1 6 LOW CURRENT OPERATION 0.65 2.0 0.2 0.2 (All Leads

5.13. upa800 rl sot363.pdf Size:30K _nec

UPA805T
UPA805T

PRELIMINARY DATA SHEET SILICON TRANSISTOR PA800T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The PA800T has built-in 2 low-voltage transistors which are designed PACKAGE DRAWINGS to amplify low noise in the VHF band to the UHF band. (Unit: mm) 2.10.1 FEATURES 1.250.1 Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC

5.14. upa806t.pdf Size:191K _nec

UPA805T
UPA805T

NPN SILICON HIGH UPA806T FREQUENCY TRANSISTOR FEATURES OUTLINE DIMENSIONS (Units in mm) SMALL PACKAGE STYLE: PACKAGE OUTLINE S06 2 NE685 Die in a 2 mm x 1.25 mm package (Top View) LOW NOISE FIGURE: 2.1 0.1 NF = 1.5 dB TYP at 2 GHz 1.25 0.1 HIGH GAIN: |S21E|2 = 8.5 dB TYP at 2 GHz HIGH GAIN BANDWIDTH: fT = 12 GHz 1 6 0.65 EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMAN

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