2SA1137
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1137
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3
W
Tensión colector-base (Vcb): 80
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 135
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 90
MHz
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta:
TO92
Búsqueda de reemplazo de transistor bipolar 2SA1137
2SA1137
Datasheet (PDF)
8.2. Size:149K jmnic
2sa1135.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1135 DESCRIPTION With TO-3PN package Complement to type 2SC2665 APPLICATIONS For general purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALU
8.3. Size:156K jmnic
2sa1133 2sa1133a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1133 2SA1133A DESCRIPTION With TO-220 package High breakdown voltage High power dissipation Complement to type 2SC2660/2660A APPLICATIONS For power amplifier and TV vertical deflection output applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified
8.4. Size:219K inchange semiconductor
2sa1133.pdf
isc Silicon PNP Power Transistor 2SA1133DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -150V (Min)(BR)CEOLarge Collector Power DissipationComplement to Type 2SC2660Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and TV vertical deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(Ta
8.5. Size:217K inchange semiconductor
2sa1135.pdf
isc Silicon PNP Power Transistor 2SA1135DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -80V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2665Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll
8.6. Size:90K inchange semiconductor
2sa1133 2sa1133a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1133 2SA1133A DESCRIPTION With TO-220 package High breakdown voltage High power dissipation Complement to type 2SC2660/2660A APPLICATIONS For power amplifier and TV vertical deflection output applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base
8.7. Size:209K inchange semiconductor
2sa1133a.pdf
isc Silicon PNP Power Transistor 2SA1133ADESCRIPTIONCollector-Emitter Breakdown Voltage-V = -180V (Min)(BR)CEOLarge Collector Power DissipationComplement to Type 2SC2660AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and TV vertical deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(
Otros transistores... 2SA1127
, 2SA1128
, 2SA1129
, 2SA113
, 2SA1133
, 2SA1133A
, 2SA1135
, 2SA1136
, BD135
, 2SA1138
, 2SA114
, 2SA1141
, 2SA1142
, 2SA1143
, 2SA1144
, 2SA1145
, 2SA1145O
.
