2SB1261-K . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB1261-K
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50 MHz
Capacitancia de salida (Cc): 40 pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de transistor bipolar 2SB1261-K
2SB1261-K Datasheet (PDF)
2sb1261-m 2sb1261-l 2sb1261-k.pdf
2SB1261Silicon PNP Power TransistorsDESCRIPTIONLow Collector Saturation VoltageHigh Power Dissipation-: P = 10W(Max)@T =25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio amplifier and switching,especially in hybrid integrated circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
2sb1261-k.pdf
isc Silicon NPN Power Transistors 2SB1261-KDESCRIPTIONLow Collector Saturation VoltageHigh Power Dissipation-: P = 10W(Max)@T =25C CComplement to Type 2SD1899-KMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio amplifier and switching,especially in hybrid integrated circuits.ABSOLUTE MAXIMUM
2sb1261-z.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors TO-251-3L 2SB1261-Z TRANSISTOR (PNP) FEATURES 1. BASE High hFE Low VCE(sat) 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base V
2sb1261-z.pdf
2SB1261-Z(PNP) TO-251/TO-252-2L TransistorTO-2511. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) 0.3V MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2LSymbol Parameter Value UnitsVCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current -
2sb1261-z.pdf
SMD Type TransistorsPNP Transistors2SB1261-ZTO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features High hFE hFE = 100 to 400 Low VCE(sat) VCE(sat) 0.3 V0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Coll
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
