2SB1261-K Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB1261-K
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 50 MHz
Capacitancia de salida (Cc): 40 pF
Ganancia de corriente contínua (hFE): 200
Encapsulados: TO-252
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2SB1261-K datasheet
2sb1261-m 2sb1261-l 2sb1261-k.pdf
2SB1261 Silicon PNP Power Transistors DESCRIPTION Low Collector Saturation Voltage High Power Dissipation- P = 10W(Max)@T =25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio amplifier and switching, especially in hybrid integrated circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET
2sb1261-k.pdf
isc Silicon NPN Power Transistors 2SB1261-K DESCRIPTION Low Collector Saturation Voltage High Power Dissipation- P = 10W(Max)@T =25 C C Complement to Type 2SD1899-K Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio amplifier and switching, especially in hybrid integrated circuits. ABSOLUTE MAXIMUM
Otros transistores... MJB32B, UPA801TC-FB, UPA801TC-GB, UPA805T, 2SA1069-Z, 2SA1261-Z, 2SA1358-Z, 2SAR586D3, BC558, 2SB1468, 2SB1531, 2SB946A, 2SC1402, 2SC3353A, 2SC4538R, 2SC4573, 2SC4574
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