2SC4652 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC4652
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 120 V
Tensión colector-emisor (Vce): 120 V
Tensión emisor-base (Veb): 8 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: TO3P
Búsqueda de reemplazo de transistor bipolar 2SC4652
2SC4652 Datasheet (PDF)
2sc4652.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4652DESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgenera
2sc4650.pdf
Ordering number:EN3581PNP/NPN Epitaxial Planar Silicon Transistors2SA1787/2SC4650High-Definition CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High breakdown voltage : VCEO 200V.unit:mm Small reverse transfer capacitance and excellent high2064frequency characteristic:[2SA1787/2SC4650]Cre=1.2pF (NPN), 1.7pF (PNP). Adoption of FBET processes
2sc4656 e.pdf
Transistor2SC4656Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA17911.6 0.150.4 0.8 0.1 0.4FeaturesSmall collector output capacitance Cob.1SS-Mini type package, allowing downsizing of the equipmentand automatic insertion through the tape packing.32Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit 0.
2sc4656.pdf
Transistor2SC4656Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA17911.6 0.150.4 0.8 0.1 0.4FeaturesSmall collector output capacitance Cob.1SS-Mini type package, allowing downsizing of the equipmentand automatic insertion through the tape packing.32Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit 0.
2sc4655.pdf
Transistor2SC4655Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesOptimum for RF amplification, oscillation, mixing, and IF of FM/1AM radios.SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Ratings (Ta=25C)0.2 0.1Parameter
2sc4655 e.pdf
Transistor2SC4655Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesOptimum for RF amplification, oscillation, mixing, and IF of FM/1AM radios.SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Ratings (Ta=25C)0.2 0.1Parameter
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
