2SC4848 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SC4848
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 250 V
   Tensión colector-emisor (Vce): 120 V
   Tensión emisor-base (Veb): 12 V
   Corriente del colector DC máxima (Ic): 7 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 20 MHz
   Capacitancia de salida (Cc): 150 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de transistor bipolar 2SC4848

2SC4848 Datasheet (PDF)

..1. Size:92K no
2sc4848.pdf

..2. Size:185K inchange semiconductor
2sc4848.pdf

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4848DESCRIPTIONLow Collector Saturation Voltage: V = 0.6V(Max)@ I = 5ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

8.1. Size:743K 1
2sc482 2sc483 2sc484 2sc485 2sc486 2sc487 2sc488 2sc489.pdf

8.2. Size:467K toshiba
2sc4840.pdf

2SC4840 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4840 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V

8.3. Size:468K toshiba
2sc4842.pdf

2SC4842 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4842 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 14dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VC

8.4. Size:469K toshiba
2sc4844.pdf

2SC4844 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4844 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 9.5dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V

8.5. Size:468K toshiba
2sc4843.pdf

2SC4843 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4843 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 15.5dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5

8.6. Size:465K toshiba
2sc4841.pdf

2SC4841 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4841 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 8.5dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V

8.7. Size:39K rohm
2sc4849.pdf

2SC4849TransistorsTransistors2SC5147(94L-712-C342)(96-736-C358)302

8.8. Size:73K no
2sc4652 2sc4847 2sc4850.pdf

8.9. Size:186K inchange semiconductor
2sc4847.pdf

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4847DESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose applicationsA

8.10. Size:185K inchange semiconductor
2sc4849.pdf

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4849DESCRIPTIONLow Collector Saturation Voltage: V = 0.6V(Max)@ I = 5ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: MRF899

Liste

Recientemente añadidas las descripciónes de los transistores:

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