2SC5696 Todos los transistores

 ..1. Size:29K  sanyo
 2sc5696.pdf

Ordering number ENN6663B 2SC5696 NPN Triple Diffused Planar Silicon Transistor 2SC5696 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1600V). 2174A High reliability(Adoption of HVP process). [2SC5696] Adoption of MBIT process. 5.6 3.4 16.0 On-chip damper diode. 3.1 2.8 2.

 ..2. Size:188K  inchange semiconductor
 2sc5696.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5696 DESCRIPTION High speed switching Built-in damper diode type 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for display horizontal deflection output Switching regulator and general purpose ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

 8.1. Size:167K  toshiba
 2sc5692.pdf

2SC5692 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5692 Industrial Applications High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 400 to 1000 (I = 0.3 A) C Low collector-emitter saturation voltage V = 0.14 V (max) CE (sat) High-speed switching t = 120 ns (typ.) f Maximum Ratings (

 8.2. Size:411K  toshiba
 2sc5695.pdf

2SC5695 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5695 Horizontal Deflection Output for High Resolution Display, Unit mm Color TV High voltage VCBO = 1500 V Low saturation voltage V = 3 V (max) CE (sat) High speed t (2) = 0.1 s (typ.) f Maximum Ratings (Tc = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO

 8.3. Size:28K  sanyo
 2sc5690.pdf

Ordering number ENN6896A 2SC5690 NPN Triple Diffused Planar Silicon Transistor 2SC5690 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SC5690] Adoption of MBIT process. 5.6 3.4 16.0 On-chip dam

 8.4. Size:28K  sanyo
 2sc5699.pdf

Ordering number ENN6665A 2SC5699 NPN Triple Diffused Planar Silicon Transistor 2SC5699 CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SC5699] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0.7 1 2 3 1

 8.5. Size:29K  sanyo
 2sc5698.pdf

Ordering number ENN6664A 2SC5698 NPN Triple Diffused Planar Silicon Transistor 2SC5698 CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SC5698] Adoption of MBIT process. 5.6 3.4 16.0 On-chip damper diode. 3.1 2.8 2.0

 8.6. Size:37K  sanyo
 2sa2037 2sc5694.pdf

Ordering number ENN6587 2SA2037 / 2SC5694 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2037 / 2SC5694 DC / DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers and unit mm printer drivers. 2042B 8.0 [2SA2037 / 2SC5694] 4.0 3.3 1.0 1.0 Features Adoption of MBIT process. Large current capacity. 3.0 Low co

 8.7. Size:180K  inchange semiconductor
 2sc5694.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5694 DESCRIPTION High speed switching Large Current Capacity High allowable power dissipation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers,lanp drivers,motor drivers and printer drivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S