2SD711 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SD711 FUJI POWER TRANSISTORTRIPLE DIFFUSED PLANER TYPEHIGH POWER DARLINGTON

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD711DESCRIPTIONHigh DC Current GainLow Collector Saturation VoltageExcellent Safe Operating AreaHigh Reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor controlsInverterschoppersSwitching regulatorsG

UTC 2SD718 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES *Recommended for 45~50W Audio Frequency *Amplifier Output Stage. *Complementary to 2SB688. 1TO-3P 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25) PARAMETER SYMBOL RATINGS UNITCollector-Base Voltage VCBO 120 VCollector-Emitter Voltage VCEO 120 VEmitter-Base Voltage

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2SD716 SILICON EPITAXIAL PLANAR TRANSISTORGENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purposeTO-3P(I)DQUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS MIN MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 100 VCollector-emitter voltage (open base)VCEO - 100 VCollector curre

Silicon Epitaxial Planar Transistor2SD717GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purposeTO-3P(I)DQUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-emitter voltage peak value V = 0VBEV - 70 VCBOCollector-emitter voltage (open base)V - 70 VCEOCollector

NPN Silicon NPN Triple Diffused Transistor R 2SD718 SERIES APPLICATIONS Power Amplifier Applications FEATURES V =110V (min) High collector voltageV =110V (min) CEO CEOV =180V (min) V =180V (min) CEO CEO 2SB688 Complementary to 2SB688

SEMICONDUCTOR2SD718TECHNICAL DATANPN EPITAXIAL SILICON TRANSISTORHIGH POWER AMPLIFIER APPLICATIONFEATURES *Recommended for 45~50W Audio Frequency Amplifier Output Stage. *Complementary to 2SB688. 1TO-3P 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25) PARAMETER SYMBOL RATINGS UNIT Collector- VCBO 120 V Base Voltage Collector- VCEO 120 V Emitte

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SD718DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB688APPLICATIONSAudio frequency power amplifier applicationsRecommend for 45-50W audio frequency amplifieroutput stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SD717DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V (Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.4V (Max)@I = 6.0ACE(sat) CHigh Collector Power Dissipation: P = 80W @T =25C CAPPLICATIONSHigh power switching applicationsDC-DC converter and DC-AC inverter application

isc Silicon NPN Power Transistor 2SD718DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB688Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applicationsRecommend for 45-50W audio frequency amplifieroutput stage applicati

isc Silicon NPN Power Transistor 2SD716DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V (Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 2.0V (Max)@I = 4ACE(sat) CComplement to Type 2SB686Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommended for 30~35W high-fid

isc Silicon NPN Power Transistor 2SD717DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V (Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.4V (Max)@I = 6.0ACE(sat) CHigh Collector Power Dissipation: P = 80W @T =25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applicat

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD715DESCRIPTIONHigh DC Current Gain: h = 2000(Min)@ I = 1AFE CCollector-Emitter Sustaining Voltage-: V = 110V(Min)CEO(SUS)High Reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power am