BU2523AF Todos los transistores

 ..1. Size:51K  philips
 bu2523af bu2523af 1.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of HDTV receivers and pc monitors. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage

 ..2. Size:211K  inchange semiconductor
 bu2523af.pdf

isc Silicon NPN Power Transistor BU2523AF DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of HDTV receivers and pc monitors. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V

 7.1. Size:52K  philips
 bu2523ax bu2523ax 1.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of HDTV receivers and pc monitors. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage

 7.2. Size:216K  inchange semiconductor
 bu2523ax.pdf

isc Silicon NPN Power Transistor BU2523AX DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of HDTV receivers and pc monitors. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V

 8.1. Size:54K  philips
 bu2523df 1.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of HDTV receivers and pc monitors. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM

 8.2. Size:55K  philips
 bu2523dx 1.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523DX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of HDTV receivers and pc monitors. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM

 8.3. Size:213K  inchange semiconductor
 bu2523df.pdf

isc Silicon NPN Power Transistor BU2523DF DESCRIPTION High Switching Speed High Voltage Built-in Ddamper Ddiode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol