BU2532AL Todos los transistores

 ..1. Size:48K  philips
 bu2532al.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2532AL GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors up to 82 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage pea

 ..2. Size:48K  philips
 bu2532al 1.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2532AL GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors up to 82 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage pea

 ..3. Size:213K  inchange semiconductor
 bu2532al.pdf

isc Silicon NPN Power Transistor BU2532AL DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

 7.1. Size:48K  philips
 bu2532aw bu2532aw 1.pdf

Philips Semiconductors Initial specification Silicon Diffused Power Transistor BU2532AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE =

 7.2. Size:214K  inchange semiconductor
 bu2532aw.pdf

isc Silicon NPN Power Transistor BU2532AW DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

 9.1. Size:52K  philips
 bu2530al 1.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2530AL GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emi

 9.2. Size:53K  philips
 bu2530aw.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2530AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emi