BU2532AL . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BU2532AL
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 125 W
Tensión colector-base (Vcb): 1500 V
Tensión colector-emisor (Vce): 800 V
Tensión emisor-base (Veb): 7.5 V
Corriente del colector DC máxima (Ic): 16 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 6
Paquete / Cubierta: SOT430
Búsqueda de reemplazo de transistor bipolar BU2532AL
BU2532AL Datasheet (PDF)
bu2532al.pdf
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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2532AL GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use inhorizontal deflection circuits of high resolution monitors up to 82 kHz.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage pea
bu2532al 1.pdf
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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2532AL GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use inhorizontal deflection circuits of high resolution monitors up to 82 kHz.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage pea
bu2532al.pdf
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isc Silicon NPN Power Transistor BU2532ALDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of highresolution monitors.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
bu2532aw bu2532aw 1.pdf
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Philips Semiconductors Initial specification Silicon Diffused Power Transistor BU2532AW GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use inhorizontal deflection circuits of high resolution monitors.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage peak value VBE =
bu2532aw.pdf
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isc Silicon NPN Power Transistor BU2532AWDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of highresolution monitors.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
bu2530al 1.pdf
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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2530AL GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use inhorizontal deflection circuits of large screen colour television receivers up to 32 kHz.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emi
bu2530aw.pdf
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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2530AW GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use inhorizontal deflection circuits of large screen colour television receivers up to 32 kHz.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emi
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .